Semiconductor device structure and fabrication method thereof

Abstract

The present invention provides a semiconductor device structure and a preparation method thereof. The method comprises the following steps of: 1) providing a wafer, and forming a plurality of MOS devices in the wafer, and at least two MOS devices have different feature sizes; 2) measuring and obtaining distribution of feature sizes of the MOS devices in the wafer; and 3) allowing the wafer to movealong a direction being parallel to the surface of the wafer, and employing an ion beam to perform halo implant for each MOS device in a scanning mode, wherein an ion beam scanning direction is perpendicular to a wafer movement direction, wherein implanted dosages of MOS devices with large feature sizes performing halo implant are smaller than implanted dosages of MOS devices with small feature sizes performing halo implant. The preparation method of the semiconductor device structure controls that the implanted dosages of MOS devices with large feature sizes performing halo implant are smaller than the implanted dosages of MOS devices with small feature sizes performing halo implant to allow MOS devices on the wafer to generally have the same electrical features.

Description

technical field [0001] The invention belongs to the technical field of semiconductor manufacturing, and in particular relates to a semiconductor device structure and a preparation method thereof. Background technique [0002] The metal oxide semiconductor field effect transistor (MOSFET) structure is widely used in the manufacturing process of semiconductor integrated circuits (IC). The electrical characteristics of MOSFET devices are related to the thickness of the gate oxide layer (GOX THK) and the distance between source and drain. (Critical dimension, that is, the gate width of the MOSFET device, that is, the channel length between the source and drain regions in the MOSFET device) is closely related to the ion implantation process. [0003] In order to reduce the channel effect of the device, halo ion implantation (Haloimplant) is generally performed on the MOSFET device at present, so as to form a ring-shaped halo implantation region in the channel of the MOSFET device...

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Problems solved by technology

[0005] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a semiconductor device structure and a manufacturing method thereof, which are used to solve the problems in the prior art caused by the non-uniform critical dimensions of each transistor structure in the chip. The problem of low yield

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