Method for monitoring critical sizes of mask plates
A key dimension, mask technology, applied in the photoengraving process of the pattern surface, the original for opto-mechanical processing, optics, etc., which can solve the problem of limited placement, affecting product yield, affecting wafer CD uniformity, etc. problems, to achieve the effect of improving uniformity and improving product yield
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[0020] The method for monitoring critical dimensions of a mask plate of the present invention will be described in more detail below in conjunction with schematic diagrams, wherein a preferred embodiment of the present invention is shown, and it should be understood that those skilled in the art can modify the present invention described here and still implement the present invention beneficial effect. Therefore, the following description should be understood as the broad knowledge of those skilled in the art, but not as a limitation of the present invention.
[0021] In the following paragraphs the invention is described more specifically by way of example with reference to the accompanying drawings. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustr...
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