Microwave device path coupling transmission performance predicting method based on single gold wire bonding

Abstract

The invention discloses a microwave device path coupling transmission performance predicting method based on single gold wire bonding. The microwave device path coupling transmission performance predicting method comprises the steps that structural parameters, electromagnetic parameters and material attributes of a single gold wire bonding wire are determined; the single gold wire bonding wire isequivalent to a resistor and an inductor; a single gold wire bonding wire bonding pad is equivalent to two parallel-plate capacitors; the equivalent two-port network form of the single gold wire bonding wire and its bonding pad is determined; the length of the single gold wire bonding wire is calculated; the skin depth of the single gold wire bonding wire is calculated; a series resistor and a series inductor of an equivalent two-port network are determined; the pole plate separation distance of the capacitors is calculated; shunt capacitance of the equivalent two-port network is determined; atwo-port network impedance Z parameter is calculated; a microwave device transmission S parameter is calculated; a path coupling model of the transmission S parameter and structural parameters of thesingle gold wire bonding wire is established; the microwave device transmission performance under single gold wire bonding is calculated. By adopting the method, quick prediction and analysis of themicrowave device transmission performance under different structural parameters of the single gold wire bonding wire are achieved.

Description

technical field [0001] The invention belongs to the technical field of microwave radio frequency circuits, and in particular relates to a method for predicting the coupling and transmission performance of microwave devices based on single gold wire bonding. Background technique [0002] With the development of information electronics technology, microwave devices such as millimeter wave and micron wave are widely used in communication, radar, aerospace and navigation and other fields. With the development of electronic components becoming increasingly dense, integrated and miniaturized, this puts forward more stringent requirements for the assembly process of microwave devices, and the signal transmission between microwave devices is mainly realized by gold wire bonding. , so the structural parameters of gold wire bonding will directly affect the transmission performance of microwave signals. [0003] In microwave multi-chip components, gold wire bonding is usually used to ...

AI Technical Summary

Problems solved by technology

The structural parameters of a single gold wire bonding wire, including different gold wire diameters, different gold wire arch heights, and different gold wire spans, will have a serious impact on the transmission performance of microwave circuits, especially in high frequency bands (Ku, Ka band), as the operating frequency of the microwave circuit increases, the skin depth of the gold wire decreases, and the transmission performance of the microwave circuit will seriously deteriorate.

However, currently, for the analysis of the influence mechanism of a single gold wire bonding interconnection process, engineers are more concerned with modeling and simulating in electromagnetic simulation software to analyze the influence of the structural parameters of a single gold wire bonding wire on the transmission performance of microwave circuits. During the whole process, engineers must accurately model, set various structural parameters, set boundary conditions and other tedious processes before performing simulation calculations. When the simulation calculated microwave signal transmission performance does not meet the index requirements, the model needs to be modified , simulation calculation, re-modification, simulation calculation again

This repetitive process greatly increases the workload of engineering personnel and affects work efficiency

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