Building method and system for ferroelectric field effect transistor model

Abstract

The invention relates to a building method and system for a ferroelectric field effect transistor model, and belongs to the technical field of finite element modeling. The method comprises the steps of building a solid domain calculation model of a field effect transistor with a visible dielectric layer; building a phase field model of an electric domain of a ferroelectric film; and based on the phase field model, performing correction on the solid domain calculation model to obtain the ferroelectric field effect transistor model. Therefore, the electric domain evolution process of the dielectric layer under the action of an electric field can be accurately simulated and the domain structure and the domain switching condition of the dielectric layer can be observed; and moreover, the reflection of the macro-performance of the transistor and the potential distribution and carrier concentration distribution conditions under different domain structures can be simulated.

Description

technical field [0001] Embodiments of the present invention relate to the technical field of ferroelectric memory, and in particular to a method and system for establishing a model of a ferroelectric field effect transistor. Background technique [0002] The integrated circuit industry is the core of the information technology industry, and it is a strategic, basic and leading industry that supports my country's economic and social development and guarantees national security. According to the statistics of the World Semiconductor Trade Statistics Organization (WSTS), memory occupies the first place in the composition of integrated circuit products. As the size of semiconductor devices becomes smaller and smaller, the storage technology based on charge storage is getting closer and closer to the physical limit of size reduction, and the semiconductor process will also be getting closer and closer to the limit. The new storage technology beyond Moore's Law will be the develop...

AI Technical Summary

Problems solved by technology

This model links the polarization properties of the ferroelectric thin film with the macroscopic electrical properties of the transistor, realizing the connection from the mesoscopic properties to the macroscopic properties, but it reflects the evolution of the average macroscopic polarization over time, ignoring the polarization and maintain spatial inhomogeneity

Therefore the microscopic nature of the failure cannot be given

Images