Double-sided cooling power module based on multi-area parallel arrangement

Abstract

The invention discloses a double-sided cooling power module based on multi-area parallel arrangement. A metal insulating substrate connected with a negative power terminal is provided with annular insulating slots, and metal layers surrounded in the annular insulating slots are connected with upper half bridge chips through metal blocks and are connected with lower half bridge chips through metal blocks; or, a metal insulating substrate connected with a positive power terminal is provided with annular insulating slots, and lower half bridge chips and upper half bridge chips are sintered on metal layers surrounded in the annular insulating slots. Two metal insulating substrates are laminated, annular insulating slots are arranged in one metal insulating substrate, and metal layers and metal blocks are sintered inside the power module, and therefore, the area of a commutation circuit is reduced and the parasitic inductance of the module is greatly reduced. Moreover, the positive and negative power terminals laminated can be easily connected with an external bus, the area of the metal layers is increased as much as possible, the lead resistance of the module is reduced, and the parasitic inductance is significantly reduced.

Description

technical field [0001] The invention relates to a power semiconductor module, in particular to a double-sided cooling power module with multiple regions arranged side by side. Background technique [0002] The global energy crisis and the threat of climate warming make people pay more and more attention to energy conservation, emission reduction and low-carbon development while pursuing economic development. With the establishment and promotion of green environmental protection in the world, the development and application prospects of power semiconductors are broader. Existing power electronic power modules have large packages and heavy weights, which do not meet the requirements of high power density and light weight of power electronic modules, and the parasitic inductance of existing power modules is often relatively large, resulting in high overshoot voltage, which not only increases It increases the loss, and it is easy to cause chip overvoltage breakdown, which also ...

AI Technical Summary

Problems solved by technology

Existing power electronic power modules have large packages and heavy weights, which do not meet the requirements of high power density and light weight of power electronic modules, and the parasitic inductance of existing power modules is often relatively large, resulting in high overshoot voltage, which not only increases It reduces loss, and it is easy to cause chip overvoltage breakdown, which also limits the application in high switching frequency occasions

In addition, with the continuous upgrading of power density at the application end, the packaging structure of existing power modules has hindered the further improvement of power density, and a more effective heat dissipation structure must be developed to meet the increasing demand for power density

[0003] In recent years, people have gradually realized the limitations of parasitic inductance of power modules on high-frequency applications, and have conducted research on how to reduce the parasitic inductance of power modules. There are very few studies on the shape and position of power terminals

The positive and negative power terminals of existing double-sided heat dissipation power modules often adopt a side-by-side lead-out structure. The commutation circuit of this structure is relatively large, and it is difficult to further reduce the parasitic inductance; and through a large number of simulations and tests, the positive and negative power terminals have been verified. The combination form has a great influence on the parasitic inductance of the power module

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