Electrical devices and electrical equipment

Abstract

The invention relates to electrical devices and electrical equipment. An electrical device comprises a semiconductor base plate on which a power semiconductor element is formed, wherein a control electrode and a first current electrode of the power semiconductor element are arranged on a surface of the base plate; a printed circuit board on which a drive module for driving the power semiconductorelement is arranged, wherein the drive module comprises at least one first switching element, and the first switching element comprises a control terminal and current terminals; a first conductive block which is arranged between the base plate and the printed circuit board and provides electrical connection with the first current electrode; one or more connection elements which pass through the first conductive block in a mode of being electrically isolated with the first conductive block and are electrically connected with a part of the control electrode, wherein the connection elements are associated with the corresponding first switching elements; and one or more first spring components which are arranged between the corresponding connection elements and the first switching elements associated with the corresponding connection elements, wherein first current terminals of the first switching elements are electrically connected with a part of the control electrode through utilizationof the connection elements.

Description

technical field [0001] The present disclosure relates to an electrical device including a power element and an electrical device including the same. Background technique [0002] In the face of the rapid development of power electronics technology, users put forward requirements for power semiconductor devices (here also referred to as semiconductor devices or power devices) for fast commutation speed during turn-off period, high turn-off reliability, and good heat dissipation performance. The package structure of a power semiconductor device is particularly critical for a good electrical connection between the semiconductor device and an external circuit, especially for a power semiconductor device suitable for a high-voltage and high-current environment. [0003] With the continuous development of semiconductor technology, higher requirements are put forward for key indicators to measure the performance of power semiconductor devices, such as shutdown current capability or...

AI Technical Summary

Problems solved by technology

This arrangement will make the area of ​​the commutation circuit larger, which in turn leads to a larger stray inductance in the commutation circuit

In addition, during or after packaging, the mechanical pressure on the components of the semiconductor device may be much greater than the pressure that the circuit components in the drive module can withstand, which may easily cause damage to the circuit components

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