Diode and power convertor using the same

A technology of diodes and cathode electrodes, which is applied in the direction of output power conversion devices, diodes, and conversion of AC power input to DC power output. The effect of reducing the conduction loss and reducing the leakage current

Active Publication Date: 2017-11-10
HITACHI POWER SEMICON DEVICE
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0014] That is, there is a problem that it is difficult to solve the above-mentioned problems at the same time even if the technologies disclosed in Patent Document 1 and Patent Document 2 are combined.

Method used

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  • Diode and power convertor using the same
  • Diode and power convertor using the same
  • Diode and power convertor using the same

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Experimental program
Comparison scheme
Effect test

no. 1 approach 》

[0071] The diode 10 according to the first embodiment of the present invention will be described with reference to the drawings.

[0072] "Outline of Structure of Diode 10"

[0073] figure 1 An example of the upper surface and the cross section of the diode 10 according to the first embodiment of the present invention is shown.

[0074] exist figure 1 Among them, the diode 10 is formed between the anode electrode layer 600 to which the anode electrode 601 is connected and the cathode electrode layer 500 to which the cathode electrode 501 is connected.

[0075] In addition, the anode electrode layer 600 and the cathode electrode layer 500 are layers mainly made of metal.

[0076] The anode electrode layer 600 is in contact with the upper surface (the upper surface of the paper surface) of the p-type semiconductor layer 120 (the second semiconductor layer of the second conductivity type).

[0077] The lower surface of the p-type semiconductor layer 120 is connected to the n ...

no. 1 approach

[0144] － buffer layer>

[0145] In addition, the inventors of the present invention confirmed the effect of reducing the leakage current at the time of reverse voltage blocking as an effect of the buffer layer structure with respect to the low-injection structure of the cathode.

[0146] Figure 19 An example of leakage current characteristics at the time of reverse voltage blocking using the diode 10 according to the first embodiment of the present invention is shown. In addition, as a comparison, characteristic examples of the prior art are also shown together.

[0147] exist Figure 19 , the horizontal axis represents the voltage (Vka) between the anode and cathode of the diode, and the vertical axis represents the anode current (Ia) in natural logarithm. In addition, characteristic line 191 ( 191A, 191B) is a characteristic of diode 10 according to the first embodiment of the present invention, and characteristic line 192 ( 192A, 192B) is a characteristic example of a c...

no. 2 approach 》

[0156] A diode 10 according to a second embodiment of the present invention will be described with reference to the drawings.

[0157] image 3 An example of the upper surface and cross section of the diode 10 according to the second embodiment of the present invention is shown.

[0158] exist image 3 in, with figure 1 The difference is the configuration of the low carrier lifetime control layer 161 .

[0159] The low carrier lifetime control layer 161 is partially formed in the shallow n buffer layer 112 . For example, in image 3 At C2-D2 representing the position of the cross section, the low carrier lifetime control layer 161 and figure 1 The low carrier lifetime control layer 160 in the same exists, but in image 3 The C1-D1 that indicates the cross-section position does not exist.

[0160] Figure 4 represents the diode 10 of the second embodiment of the present invention image 3 Examples of depth-direction cross-sectional profiles in the C1-D1 cross-section a...

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Abstract

the invention provides a diode and a power convertor using the same. The diode and the power converter improve weighing between conduction loss and switch loss, and inhibit surge voltage and high frequency oscillation when the switch is reversely recovered in order to reduce leak current causing member damage or degradation during voltage resistance maintaining. A diode includes an anode electrode layer 600; a cathode electrode layer 500; a buffer layer 111 of a first conductivity type formed between the anode electrode layer 600 and the cathode electrode layer 500 in a region extending to a location at a distance of 30 mum or more from the cathode electrode layer 500;a first semiconductor layer 110 of the first conductivity type formed in a region between the anode electrode layer 600 and the cathode electrode layer 500, and being in contact with the buffer layer of the first conductivity type; and a second semiconductor layer 120 of a second conductivity type formed in a region between the anode electrode layer and the first semiconductor layer of the first conductivity type. The carrier concentration in the first semiconductor layer is lower than the carrier concentration in the buffer layer. The carrier concentration in the buffer layer is less than 1*10 15 cm-3.

Description

technical field [0001] The present invention relates to a diode and a power conversion device using the diode. Background technique [0002] In the power conversion device, it is connected in anti-parallel to an insulated gate bipolar transistor (IGBT) or a MOS transistor (Metal Oxide Semiconductor Field Effect Transistor, metal oxide semiconductor field effect transistor), and a diode used as a freewheeling diode is required. Loss reduction from the viewpoint of energy saving and noise reduction for reliability or controllability. [0003] The loss of a diode is represented by a forward voltage drop (VF: Forward Voltage) corresponding to the loss during conduction and a loss (Err: Reverse recovery loss, reverse recovery loss) during reverse recovery switching. In low drive frequency devices such as inverters, low VF mainly contributes to the reduction of losses in the power conversion system, and in high drive frequency devices such as inverters, mainly low Err contributes...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/861H01L27/02
CPCH01L27/0255H01L29/861H01L29/32H01L29/66136H01L29/36H01L27/0814H01L29/41716H02M1/084H02M7/537H02P27/06
Inventor 新井大夏若木政利石丸哲也森睦宏
Owner HITACHI POWER SEMICON DEVICE
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