mechanical chuck

Abstract

The invention provides a mechanical chuck comprising a base for bearing a wafer and a clamp ring assembly. The clamp ring assembly comprises a clamp ring, an insulation ring and a shield ring, and the clamp ring is used for fixing the wafer. The insulation ring is arranged on the clamp ring and used for supporting the shield ring, and the shield ring is used for shielding the upper surface of the clamp ring. The clamp ring comprises a ring-shaped body made of an insulation material. A tight pressing part is arranged on the inner peripheral wall of the ring-shaped body and used for pressing the marginal area of the upper surface of the wafer. The tight pressing part is made of a metal material. According to the mechanical chuck provided by the invention, the radio frequency energy loss on the shield ring can be reduced, the radio frequency efficiency can be improved, the spark phenomenon is avoided, bombardment of plasma on the shield ring can further be reduced, thus the temperature of the shield ring can be decreased, and thus the situation that the clamp ring deforms due to the over high temperature is avoided.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a mechanical chuck. Background technique [0002] In the manufacturing process of integrated circuits, physical vapor deposition (Physical Vapor Deposition, hereinafter referred to as PVD) technology is usually used to deposit materials such as metal layers on wafers. With the widespread application of Through Silicon Via (TSV) technology, PVD technology is mainly used to deposit barrier layers and copper seed layers in the through silicon vias. During the TSV deposition process, a mechanical chuck is usually used to fix the silicon wafer. [0003] figure 1 It is a cross-sectional view of an existing PVD device. Such as figure 1 As shown, the PVD equipment includes a reaction chamber 1, and a target 4 is arranged on the top of the reaction chamber 1, which is electrically connected to an excitation power supply (not shown in the figure), and a magnetron is...

AI Technical Summary

Problems solved by technology

Therefore, it is necessary to input higher radio frequency power to the susceptor 9 to meet the process requirements, but this will cause the radio frequency voltage on the wafer 10 to be too high, which is prone to sparking

[0007] Its two, the plasma bombardment shield 14 will make its temperature rise, and the temperature of snap ring 8 will rise rapidly thereupon, after many times of processes, snap ring 8 is easy to produce deformation due to high temperature, which is easy to cause Consequences such as positional deviation and sparking of wafer 10

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