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Radio frequency microwave device and micro nitrogen doped graphene film

A nitrogen-doped graphene, microwave device technology, applied in the direction of radiation element structure, electrical components, antenna parts, etc., can solve the problems of insufficient conductivity, limited production materials, large surface resistance, etc., to achieve application and development promotion , the effect of excellent electrical conductivity and low plane impedance

Inactive Publication Date: 2017-10-20
WUHAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the electrical conductivity of the film prepared by the new carbon material currently used is relative to the electrical conductivity of the metal material (10 7 S / m) is far from enough, and the surface resistance is relatively large, and the performance of the antenna gain and other properties is not ideal, which limits its use as a material for passive devices such as antennas.

Method used

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  • Radio frequency microwave device and micro nitrogen doped graphene film
  • Radio frequency microwave device and micro nitrogen doped graphene film
  • Radio frequency microwave device and micro nitrogen doped graphene film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] 1) Preparation of flexible graphene film: the polyimide precursor is printed into a film with a printing thickness of 30 μm, and then subjected to hot pressing at 100°C to obtain a graphite film;

[0023] 2) Take the graphite film prepared in step 1), put it in a graphite high-temperature furnace, undergo carbonization at 200-600°C and graphitization at a high temperature at 2000-3000°C, and finally further hot-press forming, the temperature of hot-pressing is 50-200 °C, a flexible graphene film was prepared;

[0024] 3) get the flexible graphene membrane sample that makes in step 2), do transmission electron microscope analysis and XPS measurement, the result is as attached figure 1 , with figure 2 shown; attached figure 1 It can be seen from the figure that the graphene film prepared by the present invention is composed of single-layer graphene. figure 2 As can be seen in , the graphene film has a trace nitrogen doping of 0.54%.

[0025] 4) get the flexible grap...

Embodiment 2

[0030] 1) Preparation of flexible graphene film: the polyamide precursor is printed into a film with a printing thickness of 30 μm, and then subjected to hot pressing at 100°C to obtain a graphite film;

[0031] 2) Take the graphite film prepared in step 1), put it in a graphite high-temperature furnace, undergo carbonization at 200-600°C and graphitization at a high temperature at 2000-3000°C, and finally further hot-press forming, the temperature of hot-pressing is 50-200 °C, a flexible graphene film was prepared;

[0032] 3) get the flexible graphene film sample that makes in step 2), do projection electron microscope analysis and XPS measurement; 4) get the flexible graphene film sample that makes in step 2), test its electrical conductivity, resistivity and magnetic permeability rate and other characteristics;

[0033] 4) According to step 3) to measure the electrical conductivity and magnetic permeability of the graphene film, use electromagnetic simulation software to ...

Embodiment 3

[0037] 1) Preparation of flexible graphene film: the nitrogen-doped graphene precursor is printed into a film with a printing thickness of 30 μm, and then subjected to hot pressing at 100°C to obtain a graphite film;

[0038] 2) Take the graphite film prepared in step 1), put it in a graphite high-temperature furnace, undergo carbonization at 200-600°C and graphitization at a high temperature at 2000-3000°C, and finally further hot-press forming, the temperature of hot-pressing is 50-200 °C, a flexible graphene film was prepared;

[0039] 3) get the flexible graphene membrane sample that makes in step 2), do transmission electron microscope analysis and XPS measurement;

[0040] 4) get the flexible graphene membrane sample that makes in step 2), test characteristics such as its electrical conductivity, resistivity and magnetic permeability;

[0041] 5) Measure the electrical conductivity and magnetic permeability of the graphene film according to step 4), use electromagnetic ...

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Abstract

The invention discloses a radio frequency microwave device and a micro nitrogen doped graphene film. The nitrogen doped graphene film is prepared by adopting the following method: polyimide, polyamide and nitrogen doped graphene are printed into a film, and the thickness is controlled to be within 5-100 microns; hot-press forming is performed at a temperature of 50-200 DEG C so as to prepare a graphene film; the acquired graphene film is placed in a graphene high temperature furnace and subjected to heat treatment at a temperature of 200-600 DEG C and a temperature of 2000-3000 DEG C respectively, and finally hot-press forming is performed at a temperature of 50-200 DEG C so as to prepare a flexible graphene film. The radio frequency microwave device is prepared by adopting the nitrogen doped graphene film. Compared with traditional carbon-based materials, the graphene film prepared according to the invention has a high in-plane orientation structure, thus the graphene film is enabled to have excellent conductivity and low plane impedance, and the conductivity of the graphene film can be compared with the conductivity of metal. Meanwhile, the nitrogen doped graphene film has a characteristic of low consumption, can be bent and has the advantages of low cost, simple manufacturing process and ability of being more environment-friendly.

Description

technical field [0001] The invention belongs to the field of novel material preparation, and in particular relates to a trace nitrogen-doped graphene film and a radio-frequency microwave device. Background technique [0002] RF microwave devices are an important part of radio equipment. Engineering systems such as radio communication, broadcasting, television, radar, navigation, electronic countermeasures, remote sensing, and radio astronomy, which use electromagnetic waves to transmit messages, rely on radio frequency microwave devices and their systems to work. Therefore, the development of radio frequency microwave devices is of great significance. At present, the preparation materials of most radio-frequency microwave devices are composed of metal aluminum, copper, gold, etc. The materials themselves are expensive and the production process is complicated, which greatly increases the production cost, and the metal antenna has advantages in terms of corrosion resistance ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01B1/04H01B13/00H01Q1/36
CPCH01B1/04H01B13/0026H01Q1/368
Inventor 何大平吴志鹏宋荣国
Owner WUHAN UNIV OF TECH
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