A DC busbar

Abstract

The invention discloses a novel DC busbar. The DC busbar includes: absorbing capacitors, energy storage capacitors, positive poles, negative poles, and an insulating layer; the discharge positions of multiple energy storage capacitors are in a ring structure, and multiple energy storage capacitors are connected in parallel; the positive pole and One end of the energy storage capacitor is connected; the other end of the energy storage capacitor is connected to the negative electrode; the insulating layer is stacked on the positive electrode; the negative electrode is stacked on the insulating layer; The discharge position of the absorbing capacitor is also in a ring structure; the absorbing capacitor is located on the negative pole; the absorbing capacitor is used to reduce parasitic inductance; multiple absorbing capacitors are connected in parallel; the energy storage capacitor and the Snubber capacitors are connected in parallel. The use of the DC busbar provided by the present invention can effectively reduce the parasitic inductance in the power loop, thereby reducing the voltage and current overshoot of the silicon carbide power device during the switching process, reducing switching loss, and improving the service life of the silicon carbide power device.

Description

technical field [0001] The invention relates to the technical field of power electronics, in particular to a novel DC busbar. Background technique [0002] In recent years, silicon carbide power semiconductor devices have gradually attracted people's attention because of their good material properties such as higher critical breakdown field strength, better thermal conductivity, low on-state resistance, and high switching frequency. Bipolar transistors (Insulated Gate Bipolar Transistor, IGBT), devices, silicon carbide power semiconductor devices have shorter switching times, lower switching losses, and can achieve higher switching frequencies, so they are often used in high-frequency high-power density converters In order to reduce the size of its output filter, thereby reducing the size, weight and volume of the entire power electronic device. [0003] In high-frequency converter applications, the commonly used SiC power semiconductor devices are SiC Metal-Oxide-Semicondu...

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a new type of DC busbar to solve the problem of drain-source voltage overshoot during the turn-off process of silicon carbide power MOSFET devices

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