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Controlling Method of Critical Layer Stress to Solve Cracking of Electron Beam Deposited Multilayer Film

An electron beam deposition, critical layer technology, applied in coating, ion implantation plating, metal material coating process, etc., can solve problems such as film cracking

Active Publication Date: 2018-03-20
SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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  • Application Information

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Problems solved by technology

[0003] The technical problem to be solved by the present invention is to overcome the deficiencies of the above-mentioned prior art, and provide a method for controlling the critical layer stress of electron beam deposited multilayer film cracks. The problem of film layer cracking caused by too much tensile stress of the film layer will not increase the difficulty of film system design and actual manufacturing process

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  • Controlling Method of Critical Layer Stress to Solve Cracking of Electron Beam Deposited Multilayer Film
  • Controlling Method of Critical Layer Stress to Solve Cracking of Electron Beam Deposited Multilayer Film
  • Controlling Method of Critical Layer Stress to Solve Cracking of Electron Beam Deposited Multilayer Film

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Embodiment Construction

[0031] The present invention will be further described below in conjunction with the embodiments and accompanying drawings.

[0032] The high refractive index material is HfO 2 , the low refractive index material is SiO 2 , the total number of film layers is 40, and the multilayer film with a total thickness of 8 μm is an example, illustrating the method for controlling the critical layer stress of the present invention to solve the cracking of electron beam deposited multilayer film, the method comprising the following steps:

[0033] 1) Input parameters to the computer:

[0034] including the design wavelength λ D , High refractive index material refractive index n H (1.92), low refractive index material refractive index n L (1.44), the stress σ of the high refractive index material prepared by electron beam deposition technology in the deposition environment H (360Mpa), the stress σ of the low refractive index material prepared by electron beam deposition technology in...

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Abstract

Disclosed is a critical layer stress adjusting method for solving cracking of a multi-layer film caused by electron beam deposition. Electron beam deposition technology and ion beam assisted deposition technology are combined to adopt, a stress critical layer is deposited by using the ion beam assisted deposition technology, and the other film layers except to the stress critical layer are deposited by using the electron beam deposition technology. The critical layer stress adjusting method can solve the problem that when a thicker film layer is deposited by the electron beams, the film layer is cracked because tension stress borne by the film layer is too high, and the difficulties of film system designing and practical preparation technologies are not increased.

Description

technical field [0001] The invention relates to an optical thin film, in particular to a control method for solving the critical layer stress of electron beam deposition multilayer film cracking. Background technique [0002] Film stress is one of the parameters for the performance of optical thin film components, and film stress can cause deformation of the substrate before and after coating. When the tensile stress of the film layer is too large, it may even cause cracks in the film layer, making the thin film element unusable. Film stress is closely related to film system design, deposition technology and deposition process. Large-size thin-film components for high-power applications are usually prepared by electron beam deposition technology, and multi-layer film components prepared by electron beam deposition technology often exhibit large tensile stress during the film deposition process and low-humidity environment. For a certain tensile stress, When the thickness o...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/08C23C14/10C23C14/22C23C14/30C23C14/54
CPCC23C14/083C23C14/10C23C14/221C23C14/30C23C14/54
Inventor 朱美萍曾婷婷易葵柴英杰许诺孙建王建国邵建达
Owner SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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