Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Integration solenoid double-layer magnetic film inductor and preparation method thereof

An integrated spiral and tube type technology, applied in the direction of inductors, circuits, electrical components, etc., can solve the problems of high dielectric loss of semiconductor silicon, limited inductance density, and damage to the lower coil, so as to reduce the loss of parasitic capacitance and make the The effect of low cost and guaranteed stability

Active Publication Date: 2017-08-11
UNIV OF ELECTRONIC SCI & TECH OF CHINA
View PDF4 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The defects in this structure are as follows: first, the lower layer coil is too close to the silicon substrate, and due to the high dielectric loss of semiconductor silicon, parasitic capacitance is formed in the high frequency band, resulting in a large substrate loss; second, in the preparation process , the polishing process is too close to the surface of the lower coil, which is very easy to cause damage to the lower coil; third, the structure uses a single-layer magnetic core film, and the increase in inductance density is still limited

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Integration solenoid double-layer magnetic film inductor and preparation method thereof
  • Integration solenoid double-layer magnetic film inductor and preparation method thereof
  • Integration solenoid double-layer magnetic film inductor and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0030] The present invention will be further described in detail below in conjunction with the drawings and embodiments.

[0031] This embodiment provides an integrated solenoid double-layer magnetic film inductor, the structure of which is as follows figure 2 As shown, it includes a silicon substrate, a lower magnetic core film, a deep buried layer, a lower coil, an upper magnetic core film, an insulating layer and an upper coil; the lower magnetic core film is arranged on the silicon substrate, the lower magnetic core film and the silicon An insulating layer is also provided between the substrates, the deep buried layer covers the silicon substrate and deeply burys the lower magnetic core film, the upper surface of the deep buried layer is also provided with a lower layer coil groove, and the lower layer coil is correspondingly arranged In the lower coil groove; the upper magnetic core film is located on the deep buried layer, the upper coil is located on the upper magnetic cor...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Depthaaaaaaaaaa
Login to View More

Abstract

The present invention belongs to the integration circuit technology field, and provides an integration solenoid double-layer magnetic film inductor and a preparation method thereof. The objective of the invention is to further improve inductor inductance value density and reduce substrate loss. The present invention comprises a silicon substrate, a lower layer of magnetic core film, a deeply buried layer, a lower layer of coils, an insulation layer, an upper layer of magnetic core film, an insulation layer and an upper layer of coils; the lower layer of magnetic core film is arranged on the silicon substrate, the silicon substrate is covered with the deeply buried layer, the deeply buried layer is configured to deeply bury the lower layer of magnetic core film, the upper surface of the deeply buried layer is provided with a groove of the lower layer of coils, the lower layer of coils is correspondingly arranged in the groove of the lower layer of coils; and the upper layer of magnetic core film is located on the deeply buried layer, the upper layer of coils is located on the upper layer of magnetic core film, the installation layers are respectively arranged between the lower layer of coils and the upper layer of magnetic core film and between the upper layer of coils and the upper layer of magnetic core film for isolation, and the upper layer of coils and the lower layer of coils are conducted through a through hole. The integration solenoid double-layer magnetic film inductor and the preparation method thereof employ a double-layer magnetic core film structure so as to improve the inductance value density of the inductor and reduce loss of parasitic capacitors between coils, and the preparation technology is simple, the preparation cost is low so as to facilitate industrialization production.

Description

Technical field [0001] The invention belongs to the field of integrated circuit technology, and specifically relates to an integrated solenoid type double-layer magnetic film inductor and a preparation method thereof, which are used for improving the inductance density and quality factors. Background technique [0002] Inductance is one of the three major passive devices (inductance, resistance, and capacitance), and has an important position in RFIC circuits, but its integration has become a bottleneck restricting RFIC integration. At present, many well-known international companies and scientific research institutions such as Intel, IBM, Tyndall National Laboratory of Ireland, Ferric Company of the United States, Stanford University, etc. have introduced magnetic core films into inductors to increase the inductance density. The high-frequency performance of the magnetic cores is directly Determine the performance of the inductor. [0003] From the current research situation, the...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L23/522
CPCH01L23/5227H01L28/10
Inventor 白飞明何禹含钟智勇张怀武
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products