Carbon quantum dot loaded cuprous thiocyanate photovoltaic film and preparation method thereof

A technology of cuprous thiocyanate and carbon quantum dots, applied in circuits, electrical components, final product manufacturing, etc., can solve the problem of rare modification of CuSCN thin films, and achieve favorable structural modulation and potential applications, good optoelectronics Features, easy-to-control effects

Active Publication Date: 2017-06-13
CHINA JILIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In recent years, research on CuSCN thin films has mainly focused on regulating the structure, morphology and photoelectric properties of thin films through electrochemical deposition parameters. There are few related studies on CuSCN thin films modified by semiconductor recombination, loading, doping, etc.

Method used

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  • Carbon quantum dot loaded cuprous thiocyanate photovoltaic film and preparation method thereof
  • Carbon quantum dot loaded cuprous thiocyanate photovoltaic film and preparation method thereof
  • Carbon quantum dot loaded cuprous thiocyanate photovoltaic film and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0020] Dissolve 1.50g of anhydrous citric acid in 80mL of deionized water, stir with a magnetic stirrer for 10 minutes, transfer to a hydrothermal reaction kettle for hydrothermal reaction at 220°C for 24 hours, obtain a colorless and transparent solution after natural cooling, filter and centrifuge , to prepare a well-dispersed aqueous solution of carbon quantum dots; weigh 0.09g copper sulfate pentahydrate (CuSO 4 ·5H 2 (2), 0.105g ethylenediaminetetraacetic acid (EDTA) and 0.026g potassium thiocyanate (KSCN) powder are respectively dissolved in the carbon quantum dot aqueous solution that the above-mentioned preparation obtains, after mixing and stirring, make CuSO in the solution 4 The molar concentration of KSCN and EDTA is 12mmol / L, the molar concentration of KSCN is 3mmol / L, the three substances CuSO 4 : EDTA: The molar ratio of KSCN is 1: 1: 0.25, and the gained solution is used as the electrolyte of electrochemical deposition process; In the electrochemical reaction...

Embodiment 2

[0028] Dissolve 2.0g of anhydrous citric acid in 100mL of deionized water, stir with a magnetic stirrer for 10 minutes, transfer to a hydrothermal reaction kettle for hydrothermal reaction at 200°C for 20 hours, and obtain a colorless and transparent solution after natural cooling, filter and centrifuge , to prepare a well-dispersed aqueous solution of carbon quantum dots; weigh 0.09g copper sulfate pentahydrate (CuSO 4 ·5H 2 (2), 0.105g ethylenediaminetetraacetic acid (EDTA) and 0.052g potassium thiocyanate (KSCN) powder are dissolved in respectively in the carbon quantum dot aqueous solution that above-mentioned preparation obtains, after mixing and stirring, make CuSO in the solution 4 The molar concentration of KSCN and EDTA is 12mmol / L, the molar concentration of KSCN is 6mmol / L, the three substances CuSO 4 : EDTA: The molar ratio of KSCN is 1: 1: 0.5, and the gained solution is used as the electrolyte of electrochemical deposition process; In the three-electrode system...

Embodiment 3

[0031] Dissolve 1.8g of anhydrous citric acid in 80mL of deionized water, stir with a magnetic stirrer for 10 minutes, transfer to a hydrothermal reaction kettle for hydrothermal reaction at 200°C for 24 hours, obtain a colorless and transparent solution after natural cooling, filter and centrifuge , to prepare a well-dispersed aqueous solution of carbon quantum dots; weigh 0.09g copper sulfate pentahydrate (CuSO 4 ·5H 2 (2), 0.105g ethylenediaminetetraacetic acid (EDTA) and 0.104g potassium thiocyanate (KSCN) powder are respectively dissolved in the carbon quantum dot aqueous solution that above-mentioned preparation obtains, after mixing and stirring, make CuSO in the solution 4 The molar concentrations of , EDTA and KSCN are all 12mmol / L, and the three substances CuSO 4 : EDTA: The molar ratio of KSCN is 1: 1: 1, and the gained solution is used as the electrolyte of electrochemical deposition process; In the electrochemical reaction tank of the three-electrode system of t...

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Abstract

The invention belongs to the field of semiconductor photovoltaic films, and particularly relates to a carbon quantum dot loaded cuprous thiocyanate (CuSCN) photovoltaic film and a preparation method thereof. The carbon quantum dot loaded CuSCN photovoltaic film and the preparation method thereof are characterized in that according to the composite film, the formation of a CuSCN nanometer rod array structure and loading of each carbon quantum dot are achieved at the same time through the electrochemical deposition method, wherein the diameter of a nanometer rod is about 80-90 nm, and the particle size of the loaded carbon quantum dots is about 3-5 nm; compared with a CuSCN photovoltaic film, the composite film is higher in photoelectric current intensity and lower in electrochemical resistance value, after the carbon quantum dots are loaded, effective separation and migration of CuSCN film photon-generated carriers are promoted, and therefore better photoelectric characteristics are shown. The carbon quantum dot loaded cuprous thiocyanate (CuSCN) photovoltaic film is good in photoelectric characteristic, the preparation method is simple, the technology conditions are easy to regulate, and the carbon quantum dot loaded CuSCN photovoltaic film and the preparation method thereof are beneficial to the structure and performance modulation of the CuSCN photovoltaic film and the application in the photovoltaic field.

Description

technical field [0001] The invention belongs to the field of semiconductor photoelectric thin films, in particular to a carbon quantum dot-supported cuprous thiocyanate photoelectric thin film and a preparation method thereof. Background technique [0002] Cuprous thiocyanate (CuSCN) is a p-type semiconductor material with a wide bandgap (3.6eV) energy band structure, which can only absorb ultraviolet light with a wavelength less than 350nm. It is a transparent semiconductor and has a high Conductivity (10 -2 ~10 - 3 S.cm -1 ), which can meet the conductivity requirements of photovoltaic cells for solid electrolytes, so it has attracted attention and been widely confirmed as a hole transport material in the fields of solar cells and photovoltaic devices. For CuSCN to be applied in photovoltaic devices, the prerequisite is that it must be deposited on the surface of a conductive substrate to prepare a photoelectric film. At present, the methods for preparing CuSCN thin f...

Claims

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Application Information

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IPC IPC(8): H01L31/0264C25D9/04H01L31/18
CPCC25D9/04H01L31/0264H01L31/18Y02P70/50
Inventor 陈达王方黄岳祥秦来顺
Owner CHINA JILIANG UNIV
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