Ion-injection-assisting peeling method for ultrathin film material

Abstract

The invention relates to an ion-injection-assisting peeling method for an ultrathin film material. The ion-injection-assisting peeling method includes the steps that 1, the surface of a body material or the surface of a layered material with the thick thickness is subjected to ion injection with certain parameters, ion injection parameters are adjusted, and doped atoms are concentrated in the depth range of 0.1 nm to 10 mm inside the material; 2, due to the influence of the crystal structure and the influence of the ion injection depth of a selected material, if the film material can be damaged in the peeling process, the following step is carried out, and if the film material cannot be damaged in the peeling process, the step 3 is carried out, wherein the to-be-peeled surface of the material is additionally covered with a substrate to serve as a reinforcing layer, the injection surface and the substrate of the material are subjected to activating treatment, and the injection surface and the substrate of the material are induced to be bonded under the heating and pressurizing conditions; 3, a sample obtained in the step 2 is heated, and atoms in a solid crystal are induced to be diffused. By means of the ion-injection-assisting peeling method, ultrathin film material peeling with the atomic-scale dimension can be achieved; the thickness evenness and the surface topography of the film material can be well kept; and the crystal structure of the material can be well kept.

Description

technical field [0001] The invention relates to an ion implantation-assisted ultra-thin film material stripping method. It uses ion implantation and heat-induced atomic diffusion that can precisely control the implantation depth to peel off ultra-thin films from bulk materials or thick layered materials. The thickness accuracy can reach the atomic level, and it belongs to the field of ultra-thin material preparation. Background technique [0002] Due to its ultra-thin thickness, nanoscale thin film materials exhibit some novel physical properties, and are gradually becoming a hot direction in material science research. However, how to efficiently prepare ultra-thin film materials including two-dimensional materials has always been a difficult problem. [0003] At present, the commonly used method for thin film preparation is magnetron sputtering, which has high requirements on the properties of materials and equipment vacuum; and because in this process, atoms are bombarded...

AI Technical Summary

Problems solved by technology

The commonly used layered material peeling method is to use adhesive tape to adhere and thin repeatedly. This method can quickly obtain two-dimensional materials with atomic thickness, but it is only suitable for small-scale preparation at the experimental level, and because the adhesive tape removes the thickness of the material randomness, the repeatability of this method is very low

Common preparation methods also include ultrasonic treatment in solution. However, this method relies solely on solvent liquid buffering to reduce the energy of the exfoliated layer, and the reproducibility of the thickness and shape of the obtained layered material is not high.

In addition, the preparation of single atomic layer two-dimensional materials can also use plasma etching to deconstruct the structure of nanotubes, but because this method is not compatible with liquid phase preparation, large-scale production of two-dimensional materials cannot be carried out

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