Polycrystalline silicon ingot furnace

A polycrystalline silicon ingot furnace and furnace body technology are applied in the directions of polycrystalline material growth, crystal growth, and single crystal growth to achieve the effects of improving isotherm distribution, improving quality and efficiency, and reducing energy consumption

Pending Publication Date: 2017-06-13
JINGYUNTONG TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the ingot furnace heater with dual power supply structure is limited by the fixed position of the heater, and simply changing the power ratio of dual power supplies has little effect on the shape of the isotherm, or even has a negative impact

Method used

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  • Polycrystalline silicon ingot furnace
  • Polycrystalline silicon ingot furnace
  • Polycrystalline silicon ingot furnace

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Embodiment Construction

[0032] In order to improve the isotherm distribution in the ingot furnace, improve the quality and efficiency of polysilicon ingots, and reduce energy consumption. , the embodiment of the present invention provides a polycrystalline silicon ingot furnace. In order to make the objectives, technical solutions and advantages of the present invention clearer, the present invention will be further described in detail with reference to the following examples.

[0033] refer to figure 1 , a polycrystalline silicon ingot furnace provided by an embodiment of the present invention includes a furnace body 1, a top thermal insulation layer 2, a bottom thermal insulation layer 3, a side thermal insulation layer 4, a top heater 5, and a side heater 6. The heater moves Device 7, and crucible 8, wherein, the top thermal insulation layer 2, the bottom thermal insulation layer 3 and the side thermal insulation layer 4 are assembled and wrapped on the outside of the crucible 8, and the heater m...

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Abstract

The invention relates to the technical field of polycrystalline silicon ingot production and discloses a polycrystalline silicon ingot furnace to improve isotherm distribution therein, improve quality and efficiency of polycrystalline silicon ingotting and lower energy consumption. The polycrystalline silicon ingot furnace comprises a furnace body, a top heat-insulating layer, a bottom heat-insulating layer, a lateral heat-insulating layer, a top heater, a lateral heater, a heater moving device and a crucible, the top heat-insulating layer, the bottom heat-insulating layer and the lateral heat-insulating layer are assembled and coated on the outer side of the crucible, and the heater moving device is electrically connected with the lateral heater and carries and drives the same to move.

Description

technical field [0001] The invention relates to the technical field of polycrystalline silicon ingot production, in particular to a polycrystalline silicon ingot furnace. Background technique [0002] The ingot furnace is a necessary equipment for the remelting of polycrystalline silicon ingots in the solar energy industry. The quality of remelting will directly affect the conversion efficiency of silicon wafers and the yield of silicon wafer processing. The equipment can automatically or manually complete the ingot casting process, with high efficiency and energy saving. It uses advanced computer control technology to achieve stable directional solidification, and produces polycrystalline silicon ingots of high quality and large specifications. [0003] Existing polycrystalline silicon ingot furnace equipment is used to form the temperature gradient required by the ingot furnace through the movement of the insulation layer and the formula temperature. When the power ratio ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B28/06C30B29/06
CPCC30B28/06C30B29/06
Inventor 陈辉李少捧关树军张立杰周冰
Owner JINGYUNTONG TECH CO LTD
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