Preparation method for oversized multilayer single crystal graphene and large-size single crystal copper nickel alloy

Abstract

The invention provides a preparation method for oversized multilayer single crystal graphene and large-size single crystal copper nickel alloy. The method comprises the following steps: taking nickel plated single crystal copper foil as a raw material; utilizing annealing to prepare oversized single crystal copper nickel alloy; utilizing a normal pressure chemical vapor deposition method and taking the single crystal copper nickel alloy as a substrate, thereby acquiring the oversized high-quality multilayer single crystal graphene. According to the method provided by the invention, the large-size single crystal copper nickel alloy is acquired according to a simple method; the regulating effect of the substrate is utilized to prepare the oversized multilayer single crystal graphene; the technical problems of small single crystal size and complex growth process of the multilayer graphene growth are solved; the preparation for high-quality oversized multilayer single crystal graphene sample and single crystal copper nickel alloy can be realized according to a simple method.

Description

technical field [0001] The invention relates to a preparation method of super-large-size multilayer single-crystal graphene, and also relates to a preparation method of large-size single-crystal copper-nickel alloy. Background technique [0002] In 2004, Geim et al. obtained single-layer graphene for the first time by mechanical exfoliation. This huge breakthrough triggered an upsurge in research on graphene, and a series of novel properties of graphene began to show up in front of people. Graphene's unique energy band structure makes it have many peculiar electrical properties. In addition, graphene's ultra-high mechanical strength, thermal conductivity, and excellent light transmittance make it have broad application prospects in many other fields. At the same time, the preparation method of graphene has also become a research hotspot. In 2009, Ruoff et al. first discovered that high-quality single-layer graphene can be effectively obtained by using chemical vapor deposit...

AI Technical Summary

Problems solved by technology

[0003] Although the preparation method of graphene has been greatly improved in the past few years, the practical application and industrialization of graphene have not progressed smoothly. There are two main problems: (1) the copper used in the current CVD method to grow graphene The foil is usually polycrystalline copper foil, so that the grown graphene is a polycrystalline film, and the existence of grain boundaries greatly affects the intrinsic properties of graphene; (2) despite its high mobility, its zero-bandgap characteristic Limiting the application of graphene in the field of electronic logic devices

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