AlGaN/GaN heterojunction field effect transistor with partial P type GaN cap layer

Abstract

The invention discloses an AlGaN / GaN heterojunction field effect transistor with a partial P type GaN cap layer. According to the transistor structure, the P type GaN cap layer is introduced into the grid edge of the transistor and will reduce the two-dimensional electron gas concentration of a conducting channel of the region to achieve the electric field modulation effect. By generating a new electric field peak, high electric field of the grid edge is reduced, and the electric field on the surface of the transistor is more uniform. Compared with a traditional structure, the breakdown voltage and reliability of the field effect transistor are obviously improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to an AlGaN / GaN heterojunction field effect transistor. Background technique [0002] Due to the limitations of the first-generation and second-generation semiconductor materials represented by Si and GaAs, the third-generation wide-bandgap semiconductor materials have been developed rapidly because of their excellent performance. As one of the cores of the third-generation semiconductor materials, GaN material is special in its polarization effect compared with Si, GaAs and SiC. Taking advantage of this particularity, people have developed AlGaN / GaN high electron mobility transistors, and AlGaN / GaN HEMTs are GaN-based microelectronic devices based on AlGaN / GaN heterojunction materials. The AlGaN / GaN heterojunction forms a high-density two-dimensional electron gas (2DEG) at the heterojunction interface through spontaneous polarization and piezoelectric polarization ef...

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Problems solved by technology

[0004] In order to solve a series of problems such as avalanche breakdown, current collapse effect, threshold voltage and output current reduction, and reliability reduction caused by the peak electric field at the gate edge of the AlGaN / GaN heterojunction field effect transistor in the prior art , the present invention provides a novel AlGaN / GaN heterojunction field effect transistor

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