IGBT (insulated gate bipolar transistor) device and method for manufacturing same

Abstract

The invention discloses an IGBT (insulated gate bipolar transistor) device and a method for manufacturing the same. The method includes steps of 1, completely carrying out front surface processes on an IGBT device body and carrying out thinning operation on the back surface of the IGBT device body; 2, growing an epitaxial chemical compound layer on a back-surface bulk area of the IGBT device body; 3, growing silicon layers on the epitaxial chemical compound layer; 4, depositing a back-surface metal layer on the corresponding silicon layer and carrying out annealing; 5, sequentially depositing a nickel metal electrode layer, a titanium metal electrode layer and a silver metal electrode layer on the back-surface metal layer. The IGBT device and the method have the advantages that the epitaxial chemical compound layer grows on the back-surface bulk area of the IGBT device body to form heterogenous junctions, accordingly, withstand voltages of IGBT chips can be increased, and the thicknesses of the chips can be reduced; excess current carriers can be quickly combined with one another in turn-off procedures, and accordingly the turn-on and turn-off performance of the IGBT device can be improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor device preparation, in particular to an IGBT device and a preparation method thereof. Background technique [0002] At present, IGBTs generally use bulk silicon materials. When the chip is turned off and turned on, it faces a compromise between withstand voltage, turn-on voltage drop and chip thickness, switching speed and minority carrier life. If the withstand voltage of the IGBT chip is to be increased, the thickness of the IGBT chip needs to be increased. As the thickness of the IGBT chip increases, the conduction voltage drop will increase, the minority carrier life will become longer, and the switching speed will be slower. Worse, the maximum power of the device drops rapidly. Conversely, as the thickness of the IGBT chip decreases, the conduction voltage drop decreases, the life of the minority carrier becomes shorter, and the switching speed becomes faster, but the withstand voltag...

AI Technical Summary

Problems solved by technology

[0003] In summary, the current IGBT chip faces a compromise between withstand voltage, conduction voltage drop and chip thickness when the chip is turned off and on, as well as the problem of switching speed and minority carrier life. One-sided characteristics are obtained between and switching speed, and there is also great resistance in obtaining high power

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