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Laser-Based Control of Surface Morphology of Nanostructured Silicon Substrates

A nanostructure and surface morphology technology, applied in the process of producing decorative surface effects, manufacturing microstructure devices, nanotechnology, etc., can solve the problem of affecting surface morphology, distortion of silicon-based surface morphology, and unsatisfactory silicon-based surface morphology and other problems, to achieve the effect of short time and high efficiency

Active Publication Date: 2018-09-07
芜湖数字信息产业园有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The defect of this technology is that the surface morphology of the silicon substrate etched for the first time will affect the surface morphology of the second etching, and the surface morphology of the silicon substrate etched for the second time will be distorted. Such a silicon substrate surface morphology is obviously not very good. ideal

Method used

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  • Laser-Based Control of Surface Morphology of Nanostructured Silicon Substrates
  • Laser-Based Control of Surface Morphology of Nanostructured Silicon Substrates
  • Laser-Based Control of Surface Morphology of Nanostructured Silicon Substrates

Examples

Experimental program
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Effect test

Embodiment 1

[0036] Use asbestos (thermal insulation material) to touch the right plane of the nanostructure silicon substrate, the thermal conductivity of asbestos k 1 =0W / m-K. Then adjust the power of the laser to P=75mW, and irradiate the surface of the silicon-based material for 10 seconds. After laser irradiation, the silicon substrate was placed under an optical magnifying instrument for observation. The result of observation is that there is a raised silicon-based surface morphology in the center of the silicon substrate, and the corresponding height H=900nm and maximum diameter D=5.15um are measured, and the corresponding aspect ratio is 0.175, as Figure 1A shown.

Embodiment 2

[0038] Use silicon (the same material) to contact the right plane of the nanostructured silicon substrate, the thermal conductivity of silicon k 2 = 150W / m-K. Repeat the above operations to measure the corresponding height H = 900nm and the largest diameter D = 6.00um, the corresponding aspect ratio is 0.150, such as Figure 1B shown.

Embodiment 3

[0040] Use aluminum (thermal conductive material) to contact the right plane of the nanostructure silicon substrate, the thermal conductivity of aluminum k 3 = 200W / m-K. Repeat the above operations to measure the corresponding height H=900nm and maximum diameter D=6.85um, and the corresponding aspect ratio is 0.131, such as Figure 1C shown.

[0041] It can be seen from the above examples that when the thermal conductivity of the contact material gradually increases (the thermal conductivity of asbestos is the lowest, the thermal conductivity of silicon is medium, and the thermal conductivity of aluminum is the highest), the maximum height of the silicon-based surface morphology will not change. The maximum diameter D becomes larger and larger. According to the aspect ratio of the maximum height H / maximum diameter D, it can be obtained that the aspect ratio of the silicon-based surface morphology is getting smaller and smaller.

[0042] The above is to study the aspect rati...

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Abstract

The invention discloses a research method for controlling the surface morphology of nanostructured silicon based on laser: 1. Using materials with different thermal conductivity to contact the nanostructured silicon substrate; 2. Laser irradiation on the surface of the nanostructured silicon substrate; 3. Observing the silicon substrate The morphology of the substrate surface and the aspect ratio of the protrusions on the silicon substrate were measured. 4. Summarize the change law of the silicon-based surface morphology. The invention has the following characteristics: firstly, the nanostructure silicon base surface morphology is changed through the thermal conductivity of the contact material. Second, the nanostructured silicon substrate is irradiated with a laser, which is clean, environmentally friendly, and does not produce any pollution. Third, the time required to change the surface morphology of the nanostructured silicon base is short and the efficiency is high.

Description

technical field [0001] The invention belongs to the technical field of nanostructure research, and in particular relates to a research method for controlling the surface morphology of nanostructured silicon substrates based on laser. Background technique [0002] Nanostructured silicon-based materials are new materials developed on the basis of silicon materials, and are playing an increasingly important role in the field of MEMS (micro-electromechanical systems). With the continuous development and improvement of MEMS (micro-electromechanical systems), the silicon-based surface morphology required on these micro-devices has become more and more complex and diverse. [0003] At present, it has been possible to form silicon-based surface morphology on nanostructured silicon-based materials, but this technology is not yet mature, mainly in how to control the silicon-based surface morphology. For changing the silicon-based surface morphology on nanostructured silicon-based mat...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B81C1/00B82Y40/00
CPCB81C1/00444B82Y40/00
Inventor 张俐楠程从秀郑伟吴立群王洪成
Owner 芜湖数字信息产业园有限公司
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