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Flexible fully-inorganic QLED device and preparation method thereof

An inorganic and device technology, which is applied in the field of flexible all-inorganic QLED devices and its preparation, can solve the problems of low crystallinity, many structural defects, and low carrier transport efficiency of the hole transport layer, and achieve less crystal defects and rough interfaces Small degree, the effect of improving carrier transport efficiency

Active Publication Date: 2017-05-24
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of the above-mentioned deficiencies in the prior art, the purpose of the present invention is to provide a flexible all-inorganic QLED device and its preparation method, aiming to solve the problems of low crystallinity, There are many structural defects, which leads to the problem of low carrier transport efficiency of the hole transport layer

Method used

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  • Flexible fully-inorganic QLED device and preparation method thereof
  • Flexible fully-inorganic QLED device and preparation method thereof

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Embodiment 1

[0056] (1) First, clean the mica slices, and place them in ultrapure water, acetone water, and isopropanol for ultrasonic cleaning in sequence. The time for each step of ultrasonic cleaning is 15 minutes. Dry it with a gun, place it in an oven to dry, and obtain the flexible substrate of the mica sheet after cleaning for future use;

[0057] (2) On the cleaned mica sheet flexible substrate, a layer of patterned ITO electrode, that is, the bottom electrode, is sputtered and deposited on it through a mask plate, and the thickness of the ITO electrode is 60 nm;

[0058] (3) A 50-nm-thick hole-transporting layer WO was deposited on the ITO electrode using laser pulses 3 , before deposition, pump the deposition chamber to 1×10 -5 Base pressure of Torr; by KrF excimer laser (maximum energy 650mJ, λ=248nm, pulse duration 25ns) at 2J / cm 2 The energy density, frequency of 5Hz ablate stoichiometric WO 3 Target 10min (the number of pulses is 3000); among them, the distance between the...

Embodiment 2

[0063] (1) First, clean the mica slices, and place them in ultrapure water, acetone water, and isopropanol for ultrasonic cleaning in sequence. The time for each step of ultrasonic cleaning is 15 minutes. Dry it with a gun, place it in an oven to dry, and obtain the flexible substrate of the mica sheet after cleaning for future use;

[0064] (2) On the cleaned mica sheet flexible substrate, a layer of patterned ITO electrode, that is, the bottom electrode, is sputtered and deposited on it through a mask plate, and the thickness of the ITO electrode is 60 nm;

[0065] (3) Deposit a layer of 50nm thick hole transport layer NiO on the ITO electrode using laser pulses. Before deposition, pump the deposition chamber to 1×10 -5 Base pressure of Torr; by KrF excimer laser (maximum energy 650mJ, λ=248nm, pulse duration 25ns) at 2J / cm 2 The energy density, the frequency of 5Hz ablate the stoichiometric NiO target for 15min (the number of pulses is 4500); the distance between the targe...

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Abstract

The invention discloses a flexible fully-inorganic QLED device and a preparation method thereof. The preparation method comprises the steps that a bottom electrode is deposited on a cleaned mica sheet flexible substrate; a hole transmission layer is deposited on the bottom electrode by using a pulse laser deposition method; a quantum dot luminescent layer is deposited on the hole transmission layer; an electron transmission layer is deposited on the quantum dot luminescent layer; and a top electrode is deposited on the electron transmission layer. The fully-inorganic QLED device having the hole transmission layer of high crystallinity, less crystal defect, low interface roughness and high quality is acquired on the high-temperature-resistant mica sheet flexible substrate by using the laser pulse deposition method; and the carrier transmission efficiency of the hole transmission layer can be effectively enhanced by the high-quality hole transmission layer so as to enhance the luminescent efficiency of the QLED device.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a flexible all-inorganic QLED device and a preparation method thereof. Background technique [0002] In recent years, LEDs are gradually replacing traditional lighting materials and becoming a new generation of lighting sources due to their advantages such as low energy consumption, low heat generation, and long life. Organic light-emitting diodes (OLEDs) are also a research hotspot for the new generation of LEDs, but their polymer coatings are prone to aging in high-temperature environments, and they are easily oxidized in the air, and their service life is also affected to a certain extent. Inorganic materials used as the transport layer of quantum dot LEDs (QLEDs) not only reduce the stringent requirements of OLED packaging, but also prolong the service life. Therefore, QLED has become a research hotspot of new LEDs and has broad prospects. [0003] At present, there are tw...

Claims

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Application Information

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IPC IPC(8): H01L33/48H01L33/04H01L33/00
CPCH01L33/005H01L33/48
Inventor 李乐向超宇张滔辛征航张东华
Owner TCL CORPORATION
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