A kind of p-type lamsno amorphous oxide semiconductor film and preparation method thereof

A technology of amorphous oxide and semiconductor, which is applied in the manufacture of semiconductor/solid-state devices, semiconductor devices, transistors, etc., to achieve the effect of simple preparation process, low cost and promotion of development

Active Publication Date: 2020-03-03
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the currently reported AOS TFTs are all n-type channel, lack of p-type channel AOS TFT, which greatly restricts the application of AOS TFT in new generation display, transparent electronics and many other fields.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] (1) with high purity La 2 o 3 , Nb 2 o 5 and SnO 2 Powder as raw material, mixed, ground, at 1100°C O 2 Sintering under the atmosphere to make LaNbSnO ceramic sheet as the target material, in which the atomic ratio of La, Nb and Sn is 1:1:0.1;

[0026] (2) Using the radio frequency magnetron sputtering method, install the substrate and target in the sputtering reaction chamber, and evacuate to a vacuum degree of 1×10 -3 Pa;

[0027] (3) Passing Ar-O 2 For the working gas, the gas pressure is 9Pa, Ar-O 2 The flow volume ratio is 10:5, the sputtering power is 140W, and the substrate temperature is 500°C. 2 Under the bombardment of ions, the atoms and molecules on the surface of the target are sputtered out, and a thin film is deposited on the substrate. 2 Naturally cooled to room temperature under atmosphere to obtain p-type LaNbSn 0.1 o 4.2 Amorphous thin film.

[0028] Using quartz as the substrate, p-type LaNbSn was prepared according to the above growth st...

Embodiment 2

[0030] (1) with high purity La 2 o 3 , Nb 2 o 5 and SnO 2 Powder as raw material, mixed, ground, at 1100°C O 2 Sintering under the atmosphere to make LaNbSnO ceramic sheet as the target material, in which the atomic ratio of La, Nb and Sn is 1:1:0.25;

[0031] (2) Using the radio frequency magnetron sputtering method, install the substrate and target in the sputtering reaction chamber, and evacuate to a vacuum degree of 1×10 -3 Pa;

[0032] (3) Passing Ar-O 2 For the working gas, the gas pressure is 10Pa, Ar-O 2The flow volume ratio is 10:6, the sputtering power is 150W, and the substrate temperature is 350°C. 2 Under the bombardment of ions, the atoms and molecules on the surface of the target are sputtered out, and a thin film is deposited on the substrate. 2 Naturally cooled to room temperature under atmosphere to obtain p-type LaNbSn 0.25 o 4.5 Amorphous thin film.

[0033] Using quartz as the substrate, p-type LaNbSn was prepared according to the above growth ...

Embodiment 3

[0035] (1) with high purity La 2 o 3 , Nb 2 o 5 and SnO 2 Powder as raw material, mixed, ground, at 1100°C O 2 Sintering under the atmosphere to make LaNbSnO ceramic sheet as the target material, in which the atomic ratio of La, Nb and Sn is 1:1:0.4;

[0036] (2) Using the radio frequency magnetron sputtering method, install the substrate and target in the sputtering reaction chamber, and evacuate to a vacuum degree of 1×10 -3 Pa;

[0037] (3) Passing Ar-O 2 For the working gas, the gas pressure is 12Pa, Ar-O 2 The flow volume ratio is 10:7, the sputtering power is 150W, and the substrate temperature is 200°C. 2 Under the bombardment of ions, the atoms and molecules on the surface of the target are sputtered out, and a thin film is deposited on the substrate. 2 Naturally cooled to room temperature under atmosphere to obtain p-type LaNbSn 0.4 o 4.8 Amorphous thin film.

[0038] Using quartz as the substrate, p-type LaNbSn was prepared according to the above growth s...

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Abstract

The invention discloses a p-type LaMSnO amorphous oxide semiconductor thin film. In LaMSnO, the valence of La is +3, M is one of Nb, Sr, Cu and Fe, and M is of complete oxidation chemical valence state, namely, the valence of Nb is +5, the valence of Sr is +2, the valence of Cu is +2, and the valence of Fe is +3; La and M are combined with O to form a p-type conducive substrate of the material; and the valence of Sn is +4, the Sn is provided with a spherical electron orbit and highly overlapped with electron cloud in an amorphous state so as to play a role of a hole transmission channel. The invention further provides a preparation method of the p-type LaMSnO amorphous oxide semiconductor thin film, which is characterized in that a LaNbSnO ceramic piece formed by sintering is taken as a target material, a p-type LaNbSnO amorphous thin film is prepared according to a radio frequency magnetron sputtering method, wherein the hole concentration is in a range of 10<13>cm<-3> to 10<14>cm<-3>. The thin film prepared according to the method can be applied to a P-type amorphous thin-film transistor.

Description

technical field [0001] The invention relates to an amorphous oxide semiconductor thin film, in particular to a p-type amorphous oxide semiconductor thin film and a preparation method thereof. Background technique [0002] Thin film transistor (TFT) is one of the core technologies in the field of microelectronics, especially display engineering. At present, TFT is mainly based on amorphous silicon (a-Si) technology, but a-Si TFT is opaque, has strong photosensitivity, and needs to add a mask layer. The pixel aperture ratio of the display screen is low, which limits the display performance. And the mobility of a-Si is low (~2 cm 2 / Vs), cannot meet some application requirements. Although TFT based on polysilicon (p-Si) technology has high mobility, its device uniformity is poor and its fabrication cost is high, which limits its application. In addition, organic semiconductor thin-film transistors (OTFT) have also been studied a lot, but the stability of OTFT is not high, an...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/786H01L29/26H01L21/02
CPCH01L21/02365H01L29/263H01L29/78693
Inventor 吕建国吕容恺叶志镇
Owner ZHEJIANG UNIV
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