Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A kind of p-type lamsno amorphous oxide semiconductor film and preparation method thereof

A technology of amorphous oxide and semiconductor, which is applied in the manufacture of semiconductor/solid-state devices, semiconductor devices, transistors, etc., to achieve the effect of simple preparation process, low cost and promotion of development

Active Publication Date: 2020-03-03
ZHEJIANG UNIV
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the currently reported AOS TFTs are all n-type channel, lack of p-type channel AOS TFT, which greatly restricts the application of AOS TFT in new generation display, transparent electronics and many other fields.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] (1) with high purity La 2 o 3 , Nb 2 o 5 and SnO 2 Powder as raw material, mixed, ground, at 1100°C O 2 Sintering under the atmosphere to make LaNbSnO ceramic sheet as the target material, in which the atomic ratio of La, Nb and Sn is 1:1:0.1;

[0026] (2) Using the radio frequency magnetron sputtering method, install the substrate and target in the sputtering reaction chamber, and evacuate to a vacuum degree of 1×10 -3 Pa;

[0027] (3) Passing Ar-O 2 For the working gas, the gas pressure is 9Pa, Ar-O 2 The flow volume ratio is 10:5, the sputtering power is 140W, and the substrate temperature is 500°C. 2 Under the bombardment of ions, the atoms and molecules on the surface of the target are sputtered out, and a thin film is deposited on the substrate. 2 Naturally cooled to room temperature under atmosphere to obtain p-type LaNbSn 0.1 o 4.2 Amorphous thin film.

[0028] Using quartz as the substrate, p-type LaNbSn was prepared according to the above growth st...

Embodiment 2

[0030] (1) with high purity La 2 o 3 , Nb 2 o 5 and SnO 2 Powder as raw material, mixed, ground, at 1100°C O 2 Sintering under the atmosphere to make LaNbSnO ceramic sheet as the target material, in which the atomic ratio of La, Nb and Sn is 1:1:0.25;

[0031] (2) Using the radio frequency magnetron sputtering method, install the substrate and target in the sputtering reaction chamber, and evacuate to a vacuum degree of 1×10 -3 Pa;

[0032] (3) Passing Ar-O 2 For the working gas, the gas pressure is 10Pa, Ar-O 2The flow volume ratio is 10:6, the sputtering power is 150W, and the substrate temperature is 350°C. 2 Under the bombardment of ions, the atoms and molecules on the surface of the target are sputtered out, and a thin film is deposited on the substrate. 2 Naturally cooled to room temperature under atmosphere to obtain p-type LaNbSn 0.25 o 4.5 Amorphous thin film.

[0033] Using quartz as the substrate, p-type LaNbSn was prepared according to the above growth ...

Embodiment 3

[0035] (1) with high purity La 2 o 3 , Nb 2 o 5 and SnO 2 Powder as raw material, mixed, ground, at 1100°C O 2 Sintering under the atmosphere to make LaNbSnO ceramic sheet as the target material, in which the atomic ratio of La, Nb and Sn is 1:1:0.4;

[0036] (2) Using the radio frequency magnetron sputtering method, install the substrate and target in the sputtering reaction chamber, and evacuate to a vacuum degree of 1×10 -3 Pa;

[0037] (3) Passing Ar-O 2 For the working gas, the gas pressure is 12Pa, Ar-O 2 The flow volume ratio is 10:7, the sputtering power is 150W, and the substrate temperature is 200°C. 2 Under the bombardment of ions, the atoms and molecules on the surface of the target are sputtered out, and a thin film is deposited on the substrate. 2 Naturally cooled to room temperature under atmosphere to obtain p-type LaNbSn 0.4 o 4.8 Amorphous thin film.

[0038] Using quartz as the substrate, p-type LaNbSn was prepared according to the above growth s...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a p-type LaMSnO amorphous oxide semiconductor thin film. In LaMSnO, the valence of La is +3, M is one of Nb, Sr, Cu and Fe, and M is of complete oxidation chemical valence state, namely, the valence of Nb is +5, the valence of Sr is +2, the valence of Cu is +2, and the valence of Fe is +3; La and M are combined with O to form a p-type conducive substrate of the material; and the valence of Sn is +4, the Sn is provided with a spherical electron orbit and highly overlapped with electron cloud in an amorphous state so as to play a role of a hole transmission channel. The invention further provides a preparation method of the p-type LaMSnO amorphous oxide semiconductor thin film, which is characterized in that a LaNbSnO ceramic piece formed by sintering is taken as a target material, a p-type LaNbSnO amorphous thin film is prepared according to a radio frequency magnetron sputtering method, wherein the hole concentration is in a range of 10<13>cm<-3> to 10<14>cm<-3>. The thin film prepared according to the method can be applied to a P-type amorphous thin-film transistor.

Description

technical field [0001] The invention relates to an amorphous oxide semiconductor thin film, in particular to a p-type amorphous oxide semiconductor thin film and a preparation method thereof. Background technique [0002] Thin film transistor (TFT) is one of the core technologies in the field of microelectronics, especially display engineering. At present, TFT is mainly based on amorphous silicon (a-Si) technology, but a-Si TFT is opaque, has strong photosensitivity, and needs to add a mask layer. The pixel aperture ratio of the display screen is low, which limits the display performance. And the mobility of a-Si is low (~2 cm 2 / Vs), cannot meet some application requirements. Although TFT based on polysilicon (p-Si) technology has high mobility, its device uniformity is poor and its fabrication cost is high, which limits its application. In addition, organic semiconductor thin-film transistors (OTFT) have also been studied a lot, but the stability of OTFT is not high, an...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/786H01L29/26H01L21/02
CPCH01L21/02365H01L29/263H01L29/78693
Inventor 吕建国吕容恺叶志镇
Owner ZHEJIANG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com