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Method for metal configuration with photoresist deposition

A technology for depositing metal and photoresist, which is used in the manufacture of electrical components, circuits, semiconductor/solid-state devices, etc., and can solve problems such as side corrosion and metal residues

Active Publication Date: 2017-05-24
SUNTIFIC MATERIALS WEIFANG LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

First, because of the inverted trapezoid, side corrosion is prone to occur during the corrosion process before evaporation, sputtering or chemical vapor deposition of metal
Second, the inverted trapezoidal shape of the photoresist will cause the bottom width of the metal electrode or metal wire to be much larger than the top width, such as Figure 4 As shown, the bottom of the gold wire made by the existing stripping process is obviously wider than the top
Third, it is easy to produce metal residues (see image 3 )

Method used

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  • Method for metal configuration with photoresist deposition
  • Method for metal configuration with photoresist deposition
  • Method for metal configuration with photoresist deposition

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0069] A method of depositing a metal pattern using a photoresist, comprising:

[0070] A step of coating photoresist on the surface of the substrate;

[0071] The above substrate coated with photoresist is sequentially subjected to the steps of baking, exposure, baking and development, and the angle between the side wall of the photoresist pattern obtained after development and the surface of the substrate is between 80° and 100° between;

[0072] The step of depositing metal onto the surface of the developed photoresist pattern, and the metal falls on the surface of the substrate at the opening of the photoresist;

[0073] The step of removing the metal on the surface of the above-mentioned photoresist;

[0074] The step of removing the photoresist.

[0075] Preferably, after the above-mentioned photoresist-coated substrate is sequentially subjected to the steps of baking, exposure, baking and development, it also includes the step of corroding the thin layer on the surfa...

Embodiment 2

[0089] Place the 2-inch sapphire wafer that has been patterned and epitaxial GaN into the rotary coating machine manually, drop about 2 ml of soluble negative photoresist, start the coating coating machine, 3000 revolutions per minute, and last for 60 seconds Rear. Bake at 110°C for 60 seconds on a hot plate, then cool to room temperature. The photoresist film thickness was measured with a Dektak XT profilometer to be 2.35 microns. Use a proximity type (US SUSS exposure machine MA-100E) exposure machine to expose at a gap of 10 microns, and the exposure light source uses a high-pressure mercury lamp mixed wavelength light source. The mask board is an LED electrode pattern with finger. Then bake at 110 degrees Celsius for 60 seconds using a hot plate and then let it cool down to room temperature. Soak in 2.38% tetramethyl ammonium hydroxide developer solution for 60 seconds and rinse with deionized water. Such as Figure 8a Shown is a cross-sectional electron microscope pi...

Embodiment 3

[0091] Place the 2-inch sapphire wafer that has been patterned and epitaxially GaN into the rotary coating machine manually, drop about 2 ml of soluble negative photoresist to start the coating machine, 4000 rotations per minute, and continue to use for 60 seconds The hot plate is baked at 110°C for 60 seconds and then cooled to room temperature. The photoresist film thickness was measured with a Dektak XT profilometer to be 1.50 microns. Exposure, baking and development were performed using the process of Example 2. Figure 9a It is a cross-sectional electron microscope picture of the obtained photoresist pattern, the width of the groove is 5.0 microns, and the side wall of the photoresist pattern is perpendicular to the surface of the substrate. Etch with BOE (Buffer Oxide Etcher) for 40 seconds at room temperature. Metal gold was evaporated in ei-5z high vacuum evaporation coating equipment (ULVAC, Japan) for 5 hours. Figure 9b It is a cross-sectional electron microscop...

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Abstract

The invention discloses a method for metal configuration with photoresist deposition. The method comprises: the surface of a substrate is coated with a photoresist; the substrate coated with the photoresist is baked, exposed, baked, and developed successively, wherein an included angle between the side wall of a photoresist graph after development and the surface of the substrate is between 80 degrees to 100 degrees; metal is deposited to the surface of the photoresist graph after development and the metal falls on the surface of the substrate at the opening of the photoresist; the metal on the surface of the substrate is removed; and the photoresist is removed. Therefore, a problem that the bottom width of the metal electrode or metal wire is much larger than the width of the top can be solved.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a method for depositing a metal pattern using a photoresist. Background technique [0002] Currently, metal topography is very important in microelectronics, microphotonics or micromechanical devices, such as metal electrodes or wires. There are many techniques for manufacturing metal structures, one of which is the stripping process using inverted trapezoidal negative photoresist, which is called Lift Off in English. [0003] In the existing lift-off process, the production process of the metal pattern is: (1) Coating a negative photoresist on the surface of the substrate, and then making the grooves that need to be wired through steps such as baking, exposure, baking, and development. Slots or other shaped graphics. In this step, the photoresist in the photoresist pattern must be in an inverted ladder shape, such as figure 1 As shown, the chamfer a is generally between 70° and ...

Claims

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Application Information

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IPC IPC(8): H01L21/02
CPCH01L21/027
Inventor 孙逊运张盼庄兆森周元基于凯
Owner SUNTIFIC MATERIALS WEIFANG LTD
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