Target material device

Abstract

The embodiment of the invention discloses a target material device. The target material device is provided with a connecting piece and a protective plate, wherein the connecting piece comprises a supporting ring and a fixed ring, and multiple ceramic connecting piece accessories are arranged on the fixed ring at intervals; the protective plate comprises a bottom and a top formed by extending from the bottom, the top is hollow, the bottom is supported by the connecting piece accessories and covers one end face of the fixed ring, and the inner circumferential face, extending from the bottom, of the top encircles the end face, away from the fixed ring, of the supporting ring. The target material device has the advantages that the connecting piece structure exposed outside is placed into the protective plate to be protected, the protective plate is capable of protecting the connecting piece structure exposed outside from sputter of substances formed during target material sputtering coating to prevent the connecting piece from being damaged, and the service life of the connecting piece is prolonged. The substances sputtered on the protective plate are washed away easily, so that the use ratio of the connecting piece and the protective plate is increased, and the production cost is greatly reduced.

Description

technical field [0001] The invention relates to the technical field of display processing, in particular to a target device. Background technique [0002] Thin film transistor liquid crystal display (TFT-LCD) is composed of a thin film transistor (TFT) array substrate and a color filter (CF) substrate. Among them, during the fabrication process of the CF substrate, it is necessary to deposit a layer of indium tin oxide (ITO) thin film on the CF substrate by magnetron sputtering or evaporation coating. ITO thin film has excellent conductivity and visible light transmittance, and is an important transparent conductive film. At present, magnetron sputtering technology is generally used to prepare ITO thin film on CF substrate. The principle of preparing ITO thin films by magnetron sputtering technology is to realize plasma discharge under vacuum conditions, use electromagnetic field to control the movement of charged particles, bombard the ITO target, and the ITO target atoms ...

AI Technical Summary

Problems solved by technology

However, in the process of magnetron sputtering target coating substrate, the substances formed during the sputtering process are easy to splash on the connectors at the bottom of the target, destroying the structure of the connectors and reducing the service life of the connectors, resulting in a significant increase in production costs. rise

At the same time, the polyetheretherketone (peek) fittings on the connectors at the bottom of the ITO target are exposed to the air and are easily burned by electric shocks. The burned connectors are likely to cause abnormal shutdown of the production equipment, and new connectors need to be replaced. Restarting work will result in loss of production capacity and waste of time, manpower, materials, etc., greatly affecting the yield of product shipments

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