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CMOS subthreshold reference circuit with low power dissipation and low temperature drift

一种基准电路、低温漂的技术,应用在电路装置、电池电路装置、调节电变量等方向,能够解决大优化空间、温度特性没有得到优化、应用温度范围窄等问题,达到低功耗的效果

Inactive Publication Date: 2017-03-22
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The traditional sub-threshold reference circuit ignores the change of m, resulting in its temperature characteristics not being optimized, or in other words, the application temperature range of the traditional sub-threshold reference source is narrow
On the other hand, the power consumption of sub-threshold reference sources at this stage is generally on the order of μW, and there is still a large room for optimization compared to nW or even pW.

Method used

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  • CMOS subthreshold reference circuit with low power dissipation and low temperature drift
  • CMOS subthreshold reference circuit with low power dissipation and low temperature drift
  • CMOS subthreshold reference circuit with low power dissipation and low temperature drift

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Embodiment Construction

[0025] The present invention will be further elaborated below in conjunction with the accompanying drawings and specific embodiments.

[0026]The system topology diagram of the high-precision self-starting power supply circuit proposed by the present invention is as follows figure 2 As shown, it consists of 4 parts, start-up circuit, self-bias V PTAT Generating circuit, square-law current generating circuit, reference voltage output circuit; the starting branch converts the third PMOS transistor M P3 Pull down the gate end of the circuit to make the circuit out of zero state. After normal operation, the starting branch will quit working; self-bias V PTAT generating circuit, utilizing the fifth NMOS transistor M working in the sub-threshold region N5 and the sixth NMOS tube M N6 V GS The difference between the positive temperature coefficient voltage is generated; the square law current generation circuit converts the positive temperature voltage into a voltage proportiona...

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Abstract

The invention discloses a CMOS subthreshold reference circuit with low power dissipation and low temperature drift, and belongs to the technical field of power management. The CMOS subthreshold reference circuit comprises a starting circuit, a self-biasing V<PTAT> generation circuit, a square law current generation circuit and a reference voltage output circuit; the starting circuit can prevent the whole circuit from being in a zero state when a power supply is established and quits after the power supply is started; the self-biasing V<PTAT> generation circuit generates positive temperature coefficient voltage V<PTAT>; the square law current generation circuit generates a stream of currents proportional to muT<2>, wherein the currents are square law currents; lastly the square law currents are introduced into the reference voltage output circuit, and the final reference voltage VREF is obtained. The obtained reference voltage VREF can achieve the characteristics approximate to those at zero temperature within the temperature range of minus 40 DEGC to 100 DEG C; the problem that the temperature characteristics become poor due to temperature nonlinearity of carrier mobility is solved on the basis of a traditional subthreshold standard; the power dissipation is decreased from the muW magnitude to the nW magnitude, and low power dissipation is achieved.

Description

technical field [0001] The invention belongs to the technical field of power management, and in particular relates to the design of an ultra-low power consumption reference generation circuit based on a sub-threshold MOSFET. Background technique [0002] In the field of analog integrated circuit or mixed signal design, the reference voltage source is a very important and commonly used module. It is used in analog and digital converters, power converters, power amplifiers and other circuits. Voltage reference for supply voltage variations. With the continuous decline of power supply voltage, the design of reference source with low voltage, low power consumption, low temperature coefficient and high power supply rejection ratio becomes very critical. At present, it is of special and important significance to use a low-voltage power supply and a voltage reference circuit with lower power consumption. The increasing number of mobile electronic devices requires that the power s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G05F3/26
CPCG05F3/262G05F1/46G05F3/242G05F3/16H02J2207/10
Inventor 周泽坤汪尧曹建文余洪名王韵坤王安琪王卓张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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