Carbide ultrahard material for grinding sapphire wafer

Abstract

The invention discloses a carbide ultrahard material for grinding a sapphire wafer. The material is obtained through pressing-sintering on the basis that the weight ratio of high-purity 6H-SiC power to boric acid to graphite is (56-58):(34-36):(6-8), the powder is mixed to be uniform, purified water accounting for 15% of the total amount of the powder is added, mixing is conducted to be uniform, and clinker with the porosity smaller than or equal to 21% is obtained through pressing; the clinker is delivered into an electric arc furnace after being dried and then smelted into a crystal ingot at the high temperature of 1,850 DEG C to 1,900 DEG C, crushing and powder grinding are conducted, and the carbide ultrahard material which has the microhardness higher than or equal to 5,000 kg / mm<2> and the toughness value higher than or equal to 75% and is used for processing the sapphire wafer. According to the carbide ultrahard material for grinding the sapphire wafer, the preparation method is simple, suitable for industrial batched production and low in cost. The prepared carbide ultrahard material combines the advantages of toughness and self-sharpening of silicon carbide and hardness of boron carbide, when the materials are used for grinding the sapphire wafer, the grinding material does not need to be replaced in the coarse grinding and fine grinding processes, complete grinding can be achieved, and the production process of the sapphire wafer is simplified.

Description

technical field [0001] The invention relates to grinding materials, in particular to a carbide superhard material used for grinding sapphire wafers. Background technique [0002] Due to the country's strong support and promotion of the LED sapphire industry, the development of the LED sapphire industry is excellent, which brings great business opportunities to enterprises that produce and process sapphire crystals. Processing enterprises have brought great difficulties. From the perspective of materials and grinding, the best materials for processing and grinding sapphire crystals are synthetic diamond, boron carbide and silicon carbide. Due to the excessive hardness of diamond, the surface of the sapphire wafer will be scratched when grinding, affecting the light transmittance of the wafer, and the price is expensive. The hardness and other properties of boron carbide abrasives meet the requirements of grinding and processing sapphire crystals. During the production proce...

AI Technical Summary

Problems solved by technology

[0006] Due to the use of different abrasives in the rough grinding and fine grinding processes, the small particles of boron carbide and sapphire are adsorbed to each other, making it difficult to clean the surface of the sapphire wafer after fine grinding

[0007] At the same time, although the price of silicon carbide is very low, because the hardness of silicon carbide is lower than that of boron carbide, the efficiency of grinding and polishing is low, and the utilization rate of equipment is low. The use of two kinds of abrasives makes the production process more complicated, although the production cost is reduced by 3%. , but for the current sapphire LED market, the goal of reducing the cost of consumables by 20% is still difficult to achieve