A light-emitting diode chip and its preparation method

Abstract

The invention discloses a light-emitting diode chip and a preparation method thereof, and belongs to the technical field of semiconductors. The preparation method comprises the steps of sequentially forming an n-type layer, a light-emitting layer and a p-type layer on a substrate; forming a groove which extends to the n-type layer in the p-type layer by adopting an etching process; cutting an opening which extends to the substrate at the edge position of a chip by adopting laser light or a tool; depositing an insulating medium in the opening, on the side wall of the groove and on the n-type layer and the p-type layer; arranging a p-type electrode which passes through the insulating medium on the p-type layer; arranging an n-type electrode which passes through the insulating medium on the n-type layer; and splitting the substrate along the opening and forming a plurality of independent light-emitting diode chips. According to the light-emitting diode chip, the condition that the groove is also arranged in the edge region of the chip is avoided, the edge of a light-emitting region is the edge of the chip; the area occupied by the chip is significantly reduced; the side surface of the chip is protected as before; and the reliability of the chip is not affected.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a light emitting diode and a preparation method thereof. Background technique [0002] Light Emitting Diode (English: Light Emitting Diode, referred to as LED) is a semiconductor diode that can convert electrical energy into light energy. [0003] LED chip is the core component of LED. At present, the LED chip includes a sapphire substrate, and an n-type layer, a light-emitting layer, and a p-type layer stacked on the sapphire substrate in sequence. The step structure of the step structure, the side wall of the step structure, the n-type layer and the p-type layer are all provided with an insulating medium, the n-type electrode is set on the n-type layer through the insulating medium, and the p-type electrode is set on the p-type layer through the insulating medium. type layer. [0004] In the process of realizing the present invention, the inventor finds that there are...

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Problems solved by technology

[0005] The insulating medium on the side wall of the stepped structure can effectively avoid the short circuit between the n-type layer and the p-type layer, but limited by the photolithography process and the scribing process, the stepped structure set in the edge region of the LED chip has a certain width , sacrificing a certain light-emitting area, resulting in a small number of chips produced by a single wafer (wafer)

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