A high temperature resistant radar infrared compatible stealth material based on double-layer metamaterial and its preparation method

Abstract

The invention discloses a high temperature resistant radar and infrared compatible stealth material based on double-layer metamaterials. The high temperature resistant radar and infrared compatible stealth material is of a layered structure sequentially comprises a dielectric layer I, a resistance-type high temperature metamaterials layer, a dielectric layer II, a decorative layer and a frequency selective surface layer from inside to outside, wherein both the dielectric layer I and the dielectric layer II are made of oxide fiber reinforced oxide-based composite materials, the resistance-type high temperature metamaterials layer mainly comprises a high temperature resistant resistor coating with periodic patterns, the decorative layer is made of glass coatings, and the frequency selective surface layer mainly comprises a high temperature resistant antioxidant and low infrared emissivity precious metal plating layer with periodic patterns. A preparation method is characterized in that the materials of the layers are prepared in a layered manner. The high temperature resistant radar and infrared compatible stealth material has high designability, the problem of radar and infrared compatible stealth contradiction can be effectively solved from the perspective of structural design by the aid of metamaterial technology, and the high temperature resistant radar and infrared compatible stealth material has good broadband wave-absorbing performance and low emissivity and can resist high temperature of 1000 DEG C or more.

Description

technical field [0001] The invention mainly relates to the field of wave-absorbing materials, in particular to a high-temperature resistant radar infrared compatible stealth material based on a double-layer metamaterial and a preparation method thereof. Background technique [0002] With the development of radar-infrared composite detection and guidance technology, materials with radar-infrared compatible stealth properties have become an important research direction. However, there are inherent contradictions in the realization of radar-infrared-compatible stealth with the same material. The reason is that radar stealth requires materials with strong absorption and low reflection of electromagnetic waves, while infrared stealth requires materials with low absorption and high reflection. Therefore, how to solve the contradiction between the two through material structure design is the key to realize radar infrared compatible stealth. At the same time, with the improvement o...

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Problems solved by technology

[0003] Chinese patent No. ZL201110052236.6 and Chinese patent No. ZL201310078127.0 respectively disclose two resin-based radar infrared compatible stealth materials and their preparation methods. These materials have good radar infrared compatible stealth performance, but the proposed stealth material system is only It is suitable for use below 200°C, and it is difficult to apply to high-temperature environments. In addition, the proposed radar infrared compatible stealth material structure has the following obvious deficiencies: the radar infrared compatible stealth material published in Chinese Patent No. ZL201110052236.6, its structural parameters can only be limited to 6GHz The ~18GHz high-frequency frequency band realizes better wave-absorbing function; the wave-absorbing performance of the prepared stealth material is completely realized by the wave-absorbing functional layer, that is, the composite material layer, and the frequency-selective surface layer only acts as an infrared stealth function and has no contribution to the wave-absorbing performance. Fully consider the coupling effect of the frequency selective surface and the absorbing structure on the electromagnetic field to realize the synergistic absorbing function

The radar infrared compatible stealth material published by Chinese patent ZL201310078127.0 adopts a double-layer metamaterial structure, and the resistive metamaterial used is located on the surface of the dielectric layer, which can only achieve good wave absorption performance in a single frequency band of C or X. Broadband and Low frequency absorbing performance is poor

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