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Method for manufacturing quantum-dot light-emitting device and quantum-dot light-emitting device

A technology of quantum dot light emitting and manufacturing method, which is applied in the fields of organic light emitting devices, organic light emitting device structures, organic semiconductor device manufacturing/processing, etc., can solve the problems of low luminous efficiency of quantum dot light emitting devices, and achieve the effect of improving luminous efficiency

Inactive Publication Date: 2017-02-15
SHENZHEN CHINA STAR OPTOELECTRONICS TECH CO LTD
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Problems solved by technology

[0006] The object of the present invention is to provide a method for manufacturing a quantum dot light-emitting device and a quantum dot light-emitting device that can enhance the luminous efficiency of the quantum dot light-emitting device; to solve the technical problem that the luminous efficiency of the existing quantum dot light-emitting device is low

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  • Method for manufacturing quantum-dot light-emitting device and quantum-dot light-emitting device
  • Method for manufacturing quantum-dot light-emitting device and quantum-dot light-emitting device

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Embodiment Construction

[0036] The following descriptions of the various embodiments refer to the accompanying drawings to illustrate specific embodiments in which the present invention can be practiced. The directional terms mentioned in the present invention, such as "up", "down", "front", "back", "left", "right", "inside", "outside", "side", etc., are for reference only The orientation of the attached schema. Therefore, the directional terms used are used to illustrate and understand the present invention, but not to limit the present invention.

[0037] In the figures, structurally similar units are denoted by the same reference numerals.

[0038] The quantum dot light-emitting device of the present invention can be used as a display element of a flat-panel display, and since the quantum-dot light-emitting device has relatively high luminous efficiency, it can better improve the image display quality of the corresponding flat-panel display.

[0039] Please refer to figure 1 , figure 1 It is a...

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Abstract

The invention provides a method for manufacturing a quantum-dot light-emitting device. The method comprises: a substrate is provided and an anode is manufactured on the substrate by sputtering deposition; a hole injection layer is manufactured on the anode by using a suspended coating, atomization or ink-jet printing process; the hole injection layer is coated with a hole transport layer by using a suspended coating, atomization or ink-jet printing process; the hole transport layer is coated with a quantum-dot light-emitting layer by using a suspended coating, atomization or ink-jet printing process; an IZO electron transport layer is deposited on the quantum-dot light-emitting layer based on sputtering deposition or a solution method; and a cathode is manufactured on the IZO electron transport layer by using a thermal evaporation process, thereby obtaining a corresponding quantum-dot light-emitting device. In addition, the invention also provides a quantum-dot light-emitting device. According to the invention, the IZO material with the indium doping proportion of 0.01% to 20% is used for manufacturing the electron transport layer, so that the light-emitting efficiency of the quantum-dot light-emitting device is improved.

Description

technical field [0001] The invention relates to the field of manufacturing light emitting devices, in particular to a method for manufacturing a quantum dot light emitting device and the quantum dot light emitting device. Background technique [0002] Quantum dot light-emitting devices have attracted widespread attention due to their wide color gamut, low production cost, adjustable emission spectrum, and good stability under light. Therefore, they are likely to replace OLEDs as the core display devices of the next generation. [0003] The quantum dot light-emitting device includes an anode, a hole injection layer, a hole transport layer, a quantum dot light-emitting layer, an electron transport layer (which simultaneously has the functions of blocking holes, transporting electrons and injecting electrons) and a cathode. [0004] ZnO material is often used as the material of the electron transport layer due to its good hole blocking effect and good energy level matching with...

Claims

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Application Information

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IPC IPC(8): H01L51/50H01L51/56
CPCH10K50/165H10K71/00H10K2102/302
Inventor 周志超夏慧
Owner SHENZHEN CHINA STAR OPTOELECTRONICS TECH CO LTD
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