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Terahertz wave modulator based on MnZn ferrite film

A ferrite thin film and terahertz wave technology, applied in the field of terahertz wave modulators, can solve the problems of low modulation rate, small modulation amplitude, and inability to adapt, and achieve the effect of high transmittance and wide modulation frequency

Inactive Publication Date: 2017-02-15
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Most of the intermediate dielectric layers of existing THz modulation devices use SiO 2 、Al 2 o 3 As the intermediate layer material, there are defects such as low modulation rate, narrow bandwidth, and small modulation amplitude, which cannot meet the requirements of future terahertz wave communication systems.

Method used

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  • Terahertz wave modulator based on MnZn ferrite film
  • Terahertz wave modulator based on MnZn ferrite film
  • Terahertz wave modulator based on MnZn ferrite film

Examples

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Embodiment

[0035] Such as figure 1 As shown, a terahertz wave modulator based on a MnZn ferrite film provided by an embodiment of the present invention includes a P-type silicon substrate (3), a MnZn ferrite film (2 ) and a graphene layer (1), a source terminal (4), a drain terminal (5) and a gate terminal (6), wherein the manganese zinc ferrite thin film (2) is prepared by a sputtering method.

[0036] Further, the thickness of the manganese zinc ferrite thin film (2) is 200-500 nm.

[0037] The present invention also provides a preparation method of a terahertz wave modulator based on a MnZn ferrite thin film, comprising the following steps:

[0038] Step 1. Preparation of manganese zinc ferrite target:

[0039] 1.1 Preparation of oxide powder by chemical co-deposition method: Fe(NO 3 ) 3 , Mn(NO 3 ) 3 , Zn(NO 3 ) 2 Add deionized water respectively, stir and mix evenly, then add strong alkali NaOH, after neutralization reaction, flocculent metal hydroxide precipitates are forme...

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Abstract

The invention provides a terahertz wave modulator based on a MnZn ferrite film, belonging to the technical field of terahertz function devices. The terahertz wave modulator comprises a P type silicon substrate 3, a MnZn ferrite film 2, a graphene layer 1, a source terminal 4, a drain terminal 5 and a grid terminal 6, wherein the P type silicon substrate, the MnZn ferrite film and the graphene layer are stacked from bottom to top in sequence; the MnZn ferrite film 2 is prepared by adopting a sputtering method. The terahertz wave modulator has the advantages of wide modulation frequency, high transmissivity and the like by adopting the MnZn ferrite magnetic film with high saturation magnetization and low coercivity as the interlayer.

Description

technical field [0001] The invention belongs to the technical field of terahertz functional devices, and in particular relates to a terahertz wave modulator based on a MnZn ferrite thin film. Background technique [0002] THz waves generally refer to electromagnetic waves with a wavelength of 3 mm to 30 μm (frequency of 0.1 THz to 10 THz), which are between microwaves and infrared waves in the electromagnetic spectrum. THz's position in the electromagnetic spectrum determines that THz waves have properties that are rare in microwave and infrared waves, mainly including transient, coherent, broad-spectrum, low photon energy and other characteristics, which make THz waves show relative to electromagnetic waves in other bands. out of special nature. In recent years, with the continuous maturity of technologies such as optics, semiconductors, electronics, and micromachining, THz technology has also become a research hotspot. [0003] As an emerging discipline, THz technology w...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02F1/355G02F1/015C04B35/38C04B35/622
CPCG02F1/355C04B35/2658C04B35/622C04B2235/6583G02F1/015
Inventor 廖宇龙张岱南王鑫宇张怀武杨青慧文天龙钟智勇
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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