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Method for preparing preferred-orientation bismuth telluride thermoelectric thin film

A thermoelectric thin film and preferred orientation technology, which is applied in the manufacture/processing of thermoelectric devices, junction lead-out materials of thermoelectric devices, ion implantation and plating, etc. High lattice matching and uniform composition

Inactive Publication Date: 2017-02-15
INST OF ELECTRICAL ENG CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the invention is to overcome existing magnetron sputtering method and prepare Bi 2 Te 3 The thermoelectric thin film material has the disadvantages of polycrystalline state and low thermoelectric performance, and it provides a Bi 2 Te 3 Thermoelectric Thin Film Approach

Method used

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  • Method for preparing preferred-orientation bismuth telluride thermoelectric thin film

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Embodiment 1

[0027] (1) Mix metal powder Bi and Te with a purity of 99.999% according to the molar ratio of Bi:Te=2:3, and use a hot isostatic pressing device under the condition of 200MPa to make a high-density bismuth telluride alloy target, And install the bismuth telluride alloy target in the vacuum chamber of the magnetron sputtering equipment;

[0028] (2) Soak the (00l)-oriented magnesium oxide (MgO) single crystal in a mixed solution containing concentrated sulfuric acid and hydrogen peroxide with a volume ratio of 1:3 for 20 minutes, and then place it in a beaker containing acetone and a beaker of alcohol in turn. and the beaker of ultrapure aqueous solution, ultrasonically cleaned for 10 min respectively, and finally with high-purity nitrogen (N 2 ) drying the magnesium oxide (MgO) single crystal;

[0029] (3) installing the magnesium oxide single crystal cleaned in step (2) on the substrate, and baking at a temperature of 50° C. for 20 minutes;

[0030] (4) Adjust the distance...

Embodiment 2

[0037] (1) Mix metal powder Bi and Te with a purity of 99.999% according to the molar ratio of Bi:Te=2:3, and use a hot isostatic pressing device under the condition of 200MPa to make a high-density bismuth telluride alloy target, And install the bismuth telluride alloy target in the vacuum chamber of the magnetron sputtering equipment;

[0038] (2) Soak the (00l)-oriented magnesium oxide (MgO) single crystal in a mixed solution containing concentrated sulfuric acid and hydrogen peroxide with a volume ratio of 1:3 for 25 minutes, and then place it in a beaker containing acetone and alcohol in turn. and the beaker of ultrapure aqueous solution, ultrasonically cleaned for 10 min respectively, and finally with high-purity nitrogen (N 2 ) drying the magnesium oxide (MgO) single crystal;

[0039] (3) installing the magnesium oxide single crystal cleaned in step (2) on the substrate, and baking at a temperature of 60° C. for 30 minutes;

[0040] (4) Adjust the distance between the...

Embodiment 3

[0047] (1) Mix metal powder Bi and Te with a purity of 99.999% according to the molar ratio of Bi:Te=2:3, and use a hot isostatic pressing device under the condition of 200MPa to make a high-density bismuth telluride alloy target, And install the bismuth telluride alloy target in the vacuum chamber of the magnetron sputtering equipment;

[0048] (2) Soak the (00l)-oriented magnesium oxide (MgO) single crystal in a mixed solution containing concentrated sulfuric acid and hydrogen peroxide with a volume ratio of 1:3 for 30 minutes, and then place it in a beaker containing acetone and alcohol in turn. and the beaker of ultrapure aqueous solution, ultrasonically cleaned for 10 min respectively, and finally with high-purity nitrogen (N 2 ) drying the magnesium oxide (MgO) single crystal;

[0049] (3) installing the magnesium oxide single crystal cleaned in step (2) on the substrate, and baking at a temperature of 70° C. for 40 minutes;

[0050] (4) Adjust the distance between the...

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Abstract

The invention discloses a method for preparing a preferred-orientation bismuth telluride thermoelectric thin film, and method adopts a magnetron sputtering method to prepare the bismuth telluride thermoelectric thin film. The method comprises the following steps of: firstly mounting a bismuth telluride (Bi2Te3) alloy target, and then, putting cleaned magnesium oxide (MgO) single crystal on a substrate; regulating a target-substrate distance to be 100mm-140mm, and vacuum-pumping to 5*10<-4>Pa-7.5*10<-4>Pa; heating a magnesium oxide (MgO) substrate to 350-450 DEG C, introducing argon gas (Ar), and starting sputter coating under working gas pressure being 0.3Pa-0.5Pa; and finally, carrying out annealing treatment on the sputtered film at a temperature being 250-350 DEG C, thereby forming the preferred-orientation bismuth telluride thermoelectric thin film.

Description

technical field [0001] The invention relates to a method for preparing a thermoelectric functional thin film, in particular to a method for preparing a preferentially oriented bismuth telluride thermoelectric thin film. Background technique [0002] The energy issue is one of the great challenges faced by human beings in the 21st century, and economic development is closely related to the sustainable utilization of energy. Fossil energy represented by petroleum and coal can only be used by human beings for about 200 years, but some new energy sources, such as solar energy, geothermal energy, and ocean energy, are both green and environmentally friendly energy, and they are inexhaustible. Temperature difference power generation Technology can convert these new energy sources into electric energy, which will bring considerable economic and social benefits. The energy conversion of thermoelectric materials comes from three basic effects: Seebeck effect, Peltier effect and Thom...

Claims

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Application Information

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IPC IPC(8): C23C14/06C23C14/35H01L35/16H01L35/34C23C14/58C23C14/02H10N10/01H10N10/852
CPCC23C14/021C23C14/0623C23C14/3414C23C14/35C23C14/5806H10N10/852H10N10/01
Inventor 丁发柱商红静古宏伟屈飞张贺张慧亮董泽斌
Owner INST OF ELECTRICAL ENG CHINESE ACAD OF SCI
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