Highly-pure zinc arsenide preparation device and method

Abstract

The invention provides a highly-pure zinc arsenide preparation device and method. The highly-pure zinc arsenide preparation method is characterized in that the highly-pure zinc arsenide preparation device is adopted, and the method comprises the following steps: crushing and mixing metal arsenic and metal zinc under the protection of nitrogen, and filling a closed reactor with the above obtained mixture from a raw material charging opening; triggering a reaction of the metal arsenic and the metal zinc in the reactor under the protection of nitrogen by heating of an electric heater, stopping heating after the reaction starts, and allowing heat regenerated in the reaction to make the reaction continuously goes on; and naturally cooling the above obtained reaction product under the protection of nitrogen after the reaction ends in order to obtain highly-pure zinc arsenide. Highly-pure nitrogen blowing is continuously adopted in the reaction process to remove impurities in order to obtain the highly-pure zinc arsenide product. Zinc arsenide with a tetragonal crystal structure is obtained through natural cooling after reaction ending, and is used for producing hydrogen arsenide gas as a raw material.

Description

technical field [0001] The invention relates to the technical field of semiconductor material preparation. High-purity zinc arsenide is a raw material for preparing high-purity arsine gas. High-purity arsine is a raw material for the production of integrated circuits, semiconductor lighting, high-efficiency solar cells, and power devices. Background technique [0002] In the prior art, the production of high-purity zinc arsenide mainly has the following methods: [0003] (1) The preparation method disclosed in the invention patent CN201210248955.X "A Method for Producing Zinc Arsenide" is as follows: ① powder the metal arsenic and metal zinc raw materials, mix them, put them into a graphite boat, and then put the graphite boat into Seal and vacuumize the airtight reaction vessel, fill it with inert gas, and carry out the heating synthesis reaction; ②Control the synthesis reaction temperature at 600-800°C, and react to obtain primary zinc arsenide; ③The primary zinc arsenide...

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Problems solved by technology

[0006] The common disadvantage of the above methods is that the reaction and purification are carried out separately, the process time is long, the process temperature is high, the energy consumption is also high, and there are by-products, which affect the Zn 3 As 2 product quality

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