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Organic Triboelectronic Transistors and Contact Electrification Gated Light-Emitting Devices

A transistor and electronics technology, applied in the field of optoelectronics, to achieve the effects of wide selection of semiconductor materials, good control characteristics and simple preparation process

Active Publication Date: 2020-02-18
BEIJING INST OF NANOENERGY & NANOSYST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In view of the above technical problems, the present invention provides an organic triboelectronics transistor and a contact electrification gated power generation device combining a triboelectric nanogenerator and an organic thin film transistor, so as to realize a light-emitting device regulated by an external force and solve the problem of external environment Active Interaction Problems with Light Emitting Devices

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  • Organic Triboelectronic Transistors and Contact Electrification Gated Light-Emitting Devices

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Embodiment Construction

[0036] The invention uses organic materials to develop triboelectronic devices, and combines them with organic light-emitting devices to realize a new way of regulating device light emission by mechanical input, and to display human-computer interaction devices that regulate electroluminescent functions by external forces.

[0037] In order to make the purpose, technical solutions and advantages of the present invention more clear, the present invention will be further described in detail below in conjunction with specific implementation methods and with reference to the accompanying drawings.

[0038] In a first exemplary embodiment of the present invention, an organic triboelectronic transistor is provided. figure 1 It is a schematic structural diagram of an organic triboelectronics transistor according to an embodiment of the present invention. Such as figure 1 As shown, the organic triboelectronic transistor of this embodiment is based on an organic thin film transistor s...

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Abstract

The invention provides an organic triboelectronics transistor. The organic triboelectronics transistor includes: a substrate; an organic thin film transistor formed above the substrate; and a triboelectric nanogenerator formed below the substrate. The triboelectric nanogenerator comprises: a static friction part formed on the lower surface of the base; connected, the other of which is electrically connected to the gate of the organic thin film transistor. The invention uses the electrostatic potential generated by the friction generator as the gate signal to realize the regulation and control of the carrier transport characteristics in the semiconductor, has good regulation characteristics, and realizes a new way of regulating the light emission of the device by mechanical input. Based on the organic triboelectronics transistor, the invention also provides a contact electrification gate-controlled light-emitting device.

Description

technical field [0001] The invention relates to the technical field of optoelectronics, in particular to an organic triboelectronics transistor and a contact electrification gate-controlled light-emitting device. Background technique [0002] Organic light-emitting transistor is a new type of organic optoelectronic device, which integrates the switching function of organic field-effect transistor and the light-emitting function of organic light-emitting diode, and can regulate the luminous intensity of the device through the gate voltage. And the field of lasers shows potential application prospects. Although the technology of organic light-emitting transistors is very mature, in view of the three-terminal structure of the device unit, it is necessary to provide a special gate power supply and realize regulation through electrical signals, and there is no mechanism for direct interaction between the external environment and the light-emitting device. [0003] Combining the ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/42H01L51/50
CPCH10K30/00H10K50/00Y02E10/549
Inventor 张弛王中林韩昌报张丽敏
Owner BEIJING INST OF NANOENERGY & NANOSYST
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