Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method and device for writing MLC STT-MRAM data, method and device for reading data

A data writing and data technology, applied in the field of memory, can solve the problems of poor efficiency and effect, achieve data optimization, reduce writing energy consumption, and reduce energy consumption

Inactive Publication Date: 2017-01-11
STATE GRID OF CHINA TECH COLLEGE
View PDF6 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the above method only considers a single factor to optimize STT-MRAM energy consumption, and the optimized efficiency and effect are poor

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method and device for writing MLC STT-MRAM data, method and device for reading data
  • Method and device for writing MLC STT-MRAM data, method and device for reading data
  • Method and device for writing MLC STT-MRAM data, method and device for reading data

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0046] Below in conjunction with accompanying drawing and embodiment the present invention will be further described:

[0047] Under the premise that the decoded data is the same as the original data: the encoding and writing steps of MLC STT-MRAM data are as follows:

[0048] 1) When new data is written from the cache back to the main memory, it will first be transferred to the write queue to wait for writing. The width of the data to be written is the size of a cache line. When a certain data in the write queue is to be written into the memory, the memory controller will first read the old data at the corresponding address, and then compare it with the new data to be written.

[0049] 2) By comparing the old and new data, the number of magnetization states of the hard area of ​​the cell changed and the number of magnetization states of the hard area of ​​the cell not changed in each data state are obtained. Eight values ​​need to be obtained, which are the data states of the...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method and device for writing MLC STT-MRAM data, and a method and device for reading the data, wherein the method for writing the MLC STT-MRAM data comprises the steps that new data is transmitted to the write queue of MLC STT-MRAM from a buffer to wait for a write; the number of changing the magnetization state of the cell hard region by each data state when the MLC STT-MRAM is written and the corresponding mapping type are obtained through comparison of the new data and the old data; the mapping type that the number of the changes required by the magnetization state of the MLC STT-MRAM hard region is minimum is selected to serve as a remapping mode, and the remapping mode is used for numerically remapping the new data; according to a corresponding write strategy, the obtained data and mapping type after remapping is written to the MLC STT-MRAM together.

Description

technical field [0001] The invention belongs to the field of memory, and in particular relates to an MLC STT-MRAM data writing method and device, and a data reading method and device. Background technique [0002] MLC is the abbreviation of Multi-level Cell (multi-level cell), that is, two or more bits are stored in one memory cell, and STT-MRAM is Spin-Transfer Torque Magnetic Random AccessMemory (spin magnetic memory) Abbreviation. [0003] The data in MLC STT-MRAM is stored in MTJ, the full name is magnetic tunneling junction (magnetic tunnel junction). There are two main designs of MLC STT-MRAM, one is parallel MTJ design and the other is continuous MTJ design. Since STT-MRAM with parallel MTJ design is superior to STT-MRAM with continuous MTJ design in terms of energy consumption and reliability, most researches focus on the former. The parallel MTJ is composed of a reference layer (reference layer) with a fixed magnetization direction and a free layer (free layer) w...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G11C11/16
CPCG11C11/16G11C11/1673G11C11/1675
Inventor 王涛郭婷董海涛牛林马志广王玉莹崔梅英何登森吕强林桂华韩冬
Owner STATE GRID OF CHINA TECH COLLEGE
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com