High-voltage metal oxide semiconductor field effect transistor (MOSFET) with derangement super junction P regions and manufacturing method of MOSFET

Abstract

The invention discloses a high-voltage MOSFET with derangement super junction P regions and a manufacturing method of the MOSFET. The MOSFET comprises a metal layer A, an N+ substrate, a P string region, a P column region, a fifth layer epitaxial layer, a sixth layer epitaxial layer, a gate oxide layer, a metal layer B and a polysilicon gate, wherein the metal layer A, the N+ substrate, the P string region, the P column region, the fifth layer epitaxial layer and the sixth layer epitaxial layer are arranged from bottom to top sequentially, the polysilicon gate is located in the gate oxide layer, the metal layer B leads out an S pole, the polysilicon gate leads out a G pole, the metal layer A leads out a D pole, and a P buried layer is arranged in the fifth layer epitaxial layer and comprises a plurality of ion implanted regions which are arranged in derangement. According to the high-voltage MOSFET, the voltage resistance value is high, the charge deviation resistance is enhanced, the reliability is improved, the technology is simple, the efficiency and the power device yield are improved, and the cost is reduced.

Description

technical field [0001] The invention relates to a high-voltage MOSFET with dislocation-arranged superjunction P regions and a manufacturing method thereof. Background technique [0002] There are two main technical routes in the manufacturing process of the existing super junction power MOSFET: 1. Deep trench etching and filling with single crystal silicon; 2. Multiple ion implantation, annealing and epitaxy. Generally, taking the 600V SJ-VDMOS as an example, the former needs to be etched to form a trench whose depth reaches or exceeds two-thirds of the thickness of the epitaxial layer, and the trench aspect ratio is higher than 20:1. The etching equipment and process put forward very high requirements; using multiple ion implantation, annealing and epitaxy technology does not require trench etching, but the complete manufacturing process must go through multiple cycles of ion implantation, annealing, epitaxy and other processes, and the process is complex , the efficiency ...

AI Technical Summary

Problems solved by technology

If the charge is unbalanced, the withstand voltage of the device will be seriously affected and will drop sharply. When the charge amount between the columns deviates by ±10%, the breakdown voltage of the device will drop by nearly 22%.

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