IR drop and read/write interference suppression framework and operation algorithm for three-dimensional vertical stack resistive random access memory

Abstract

The invention belongs to the technical field of integrated circuits and particularly proposes a unit structure, an array framework and an operation algorithm that can effectively suppress IR drop and read / write interference for a three-dimensional vertical stack resistive random access memory (3D VRRAM). Aiming at the problem of interference of a sneaking path existent in the 3D VRRAM on read / write operation, the interference is reduced by adopting a bidirectional diode (2D) as a 2D1R unit structure assisting in gating. Aiming at the problem of excessively high IR drop in the 3D VRRAM, the IR drop is reduced by adopting a shunting technology. In addition, the influence of the IR drop on the read operation is overcome by adopting a reference plane as a read reference, and corresponding read operation method and read circuit are proposed. Aiming at the influence of the IR drop on the write operation, a Write-Verify technology is proposed.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and specifically relates to a unit structure, an array structure and an operation algorithm applicable to a three-dimensional vertically stacked resistive variable memory (3D VRRAM) capable of effectively suppressing IR drop voltage drop and read-write interference. Background technique [0002] In the current high-density storage field, NAND Flash occupies an unshakable dominant position. However, with the advancement of process nodes, in future terabyte (TB) level storage applications, NAND Flash will withdraw due to its insurmountable physical limit. At present, the industry and academia generally believe that three-dimensional stacked resistive memory (3D RRAM) will be the most promising substitute for NAND Flash in the future. The main reason is that the RRAM unit has a simple structure, is easy to integrate at the back end of the process, and has good scalability. . There are two...

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Problems solved by technology

[0004] Secondly, in 3D VRRAM, the RRAM resistive memory unit is a two-terminal device, and the array composed of it has a large number of sneaking paths, which not only brings a large amount of leakage and wastes power consumption, but also is prone to misreading Or miswrite, which will affect the read and write yield

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