A self-selecting resistive memory suitable for cross array and its reading method
A resistive memory, self-selective resistance technology, applied in semiconductor devices, electrical solid state devices, electrical components, etc., can solve the problem of high process complexity, achieve the effect of simple structure and preparation process, high compatibility, and suppressing leakage current
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment Construction
[0031] The present invention will be further described below by embodiment. It should be noted that the purpose of the disclosed embodiments is to help further understand the present invention, but those skilled in the art can understand that various replacements and modifications are possible without departing from the spirit and scope of the present invention and the appended claims of. Therefore, the present invention should not be limited to the content disclosed in the embodiments, and the protection scope of the present invention is subject to the scope defined in the claims.
[0032] A self-selective resistive memory with a volatile low-resistance state, its structure is as follows figure 1 shown. The device bottom electrode 2' and the resistive dielectric layer 3' are Pt and Ta 2 o 5 . In the traditional bipolar RRAM structure, one electrode usually uses an active material such as TiN, with a thickness of about 100 nm, which plays the role of generating oxygen va...
PUM
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com