Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A self-selecting resistive memory suitable for cross array and its reading method

A resistive memory, self-selective resistance technology, applied in semiconductor devices, electrical solid state devices, electrical components, etc., can solve the problem of high process complexity, achieve the effect of simple structure and preparation process, high compatibility, and suppressing leakage current

Active Publication Date: 2018-08-28
PEKING UNIV
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the existing self-selection RRAM devices often need to introduce special electrode materials or more dielectric layers, and the complexity of the process is still high

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A self-selecting resistive memory suitable for cross array and its reading method
  • A self-selecting resistive memory suitable for cross array and its reading method
  • A self-selecting resistive memory suitable for cross array and its reading method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0031] The present invention will be further described below by embodiment. It should be noted that the purpose of the disclosed embodiments is to help further understand the present invention, but those skilled in the art can understand that various replacements and modifications are possible without departing from the spirit and scope of the present invention and the appended claims of. Therefore, the present invention should not be limited to the content disclosed in the embodiments, and the protection scope of the present invention is subject to the scope defined in the claims.

[0032] A self-selective resistive memory with a volatile low-resistance state, its structure is as follows figure 1 shown. The device bottom electrode 2' and the resistive dielectric layer 3' are Pt and Ta 2 o 5 . In the traditional bipolar RRAM structure, one electrode usually uses an active material such as TiN, with a thickness of about 100 nm, which plays the role of generating oxygen va...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a self-selection resistive memory suitable for a cross array and a reading method thereof. The self-selection resistive memory of the present invention adopts thinner active electrodes, has a volatile low-resistance state, combines a smaller current limit value and specific read and write operations, and can suppress leakage current when applied in a cross array to realize resistance change Units are integrated in high density without selector tubes.

Description

technical field [0001] The invention relates to a resistive memory (RRAM), in particular to a structure and a reading method of a self-selecting resistive memory suitable for a cross array, belonging to a non-volatile memory (Non-volatile memory) in a CMOS ultra-large-scale integration (ULSI) ) structure and its application fields. Background technique [0002] Non-volatile memory is an important part of semiconductor devices. In recent years, with the rise of mobile Internet, Internet of Things and other technologies, the demand for non-volatile memory is increasing. Flash device, as a representative of non-volatile memory, has also been continuously shrinking according to Moore's law. However, in recent years, when the feature size is close to 20nm, the further reduction of devices has encountered great challenges, such as the increase of crosstalk between data, the increase of device parameter fluctuations, the degradation of device reliability, and so on. To meet this...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00H01L27/24
CPCH10B63/00H10N70/00
Inventor 蔡一茂潘越王宗巍喻志臻黄如
Owner PEKING UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com