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Thin-film transistor, array substrate and preparation method thereof

A technology of thin film transistors and array substrates, which is applied in the field of displays, can solve problems such as not being able to meet the characteristics requirements of thin film transistors, achieve the effects of improving carrier mobility, meeting characteristic requirements, and reducing damage

Active Publication Date: 2016-11-23
WUHAN CHINA STAR OPTOELECTRONICS TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, when the IGZO semiconductor material is used as the active layer semiconductor in the thin film transistor, when the content of In atoms is greatly increased, the semiconductor may become a conductor, which cannot meet the characteristic requirements of the thin film transistor.

Method used

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  • Thin-film transistor, array substrate and preparation method thereof
  • Thin-film transistor, array substrate and preparation method thereof
  • Thin-film transistor, array substrate and preparation method thereof

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Embodiment Construction

[0021] In order to make the object, technical solution and advantages of the present invention clearer, the specific implementation manners of the present invention will be described in detail below in conjunction with the accompanying drawings. Examples of these preferred embodiments are illustrated in the accompanying drawings. The embodiments of the invention shown in and described with reference to the drawings are merely exemplary, and the invention is not limited to these embodiments.

[0022] Here, it should also be noted that, in order to avoid obscuring the present invention due to unnecessary details, only the structures and / or processing steps closely related to the solution according to the present invention are shown in the drawings, and the related Other details are not relevant to the invention.

[0023] This embodiment firstly provides a kind of thin film transistor, refer to figure 1 , the thin film transistor 1 is formed on a substrate 00 , and the thin fil...

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Abstract

The invention discloses a thin-film transistor which comprises an active layer formed on a substrate, wherein the active layer comprises a first semiconductor layer and a second semiconductor layer which are arranged in a lamination way; the material of the first semiconductor layer is indium gallium zinc oxide of which atomic ratio In / (Ga+Zn) is less than 50%, and the material of the second semiconductor layer is indium gallium zinc oxide of which atomic ratio In / (Ga+Zn) is more than 55%. The invention also discloses an array substrate containing the above thin-film transistor and a preparation method thereof, the array substrate can be applied to a liquid crystal display (LCD) or an organic light-emitting diode (OLED). If the above provided thin-film transistor adopts two-layer IGZO semiconductor materials as an active layer semiconductor, the characteristic requirements of the thin-film transistor can be satisfied, and the carrier mobility of the IGZO active layer semiconductor can be further improved.

Description

technical field [0001] The present invention relates to the technical field of displays, in particular to a thin film transistor, an array substrate containing the thin film transistor and a preparation method thereof. Background technique [0002] The flat panel display device has many advantages such as thin body, power saving, and no radiation, and has been widely used. Existing flat panel display devices mainly include liquid crystal display devices (Liquid Crystal Display, LCD) and organic electroluminescent display devices (Organic Light Emitting Display, OLED). A thin film transistor (Thin Film Transistor, TFT) is an important part of a flat panel display device, which can be formed on a glass substrate or a plastic substrate, and is usually used as a light switching device and a driving device such as LCD and OLED. [0003] In the display panel industry, with the current large-scale display industry, the demand for high resolution is becoming stronger and stronger, ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/786H01L29/24H01L29/06H01L27/12
CPCH01L27/1222H01L27/1225H01L29/0684H01L29/24H01L29/786H01L29/66969H01L29/7869H01L29/78696H01L29/4908H01L27/12H01L29/06H01L23/3171H01L27/1288
Inventor 秦芳
Owner WUHAN CHINA STAR OPTOELECTRONICS TECH CO LTD
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