Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

The Method of Incorporating Scattering Strips into the Lithography Process

A color bar and placement technology, which is applied in the field of lithography using dispersive color bars, can solve the problems of increasing the processing complexity of integrated circuits, and achieve the effects of improving the depth of focus and reducing the printing window.

Active Publication Date: 2020-02-14
TAIWAN SEMICON MFG CO LTD
View PDF11 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The size reduction mentioned above also increases the complexity of integrated circuit processing and manufacturing

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • The Method of Incorporating Scattering Strips into the Lithography Process
  • The Method of Incorporating Scattering Strips into the Lithography Process
  • The Method of Incorporating Scattering Strips into the Lithography Process

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0056] The following disclosure provides many different embodiments, or examples, for implementing different features of the invention. Specific embodiments of components and arrangements will be described below to make the disclosure of the present invention clearer and easier to understand. The embodiments listed here should only be examples, and are not intended to limit the present invention. For example, a description of a first feature by or on a second feature may include an embodiment in which the first and second features are formed by direct contact, and may also include an embodiment in which the first and second features may be formed in direct contact. In an embodiment where additional features are formed between, the first and second features in this case may not be formed by direct contact. In addition, the reference numerals and / or letters disclosed in the present invention may appear repeatedly in different embodiments. The purpose of the repeated description...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method of embedding color-scattering stripes in a lithography process, the method comprising receiving an integrated circuit design layout including a first main component, and embedding a first plurality of color-scattering stripes into the above-mentioned integrated circuit design layout, to form a first annular pattern of dispersion strips surrounding the first main component. The above-mentioned first main component is arranged on a central part of the color-dispersing strip of the above-mentioned first circular pattern. The present invention exhibits improved depth of focus, fringe printout windows, and reduced focus shift.

Description

technical field [0001] The present invention relates to a lithography process, in particular to a lithography process using a scatter stripe. Background technique [0002] The semiconductor integrated circuit industry has experienced exponential growth. Technological advances in integrated circuit design and materials have resulted in generations of integrated circuit development, each of which shrinks in size to produce smaller and more complex circuits than the previous generation. During the evolution of integrated circuits, functional density (ie, the number of connected devices per chip area) has generally increased as process-producible geometries (ie, the smallest element or circuit) have shrunk. [0003] The size reduction process described above often brings benefits such as increased manufacturing efficiency and reduced associated costs. The aforementioned size reduction also increases the complexity of integrated circuit processing and manufacturing. In order t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/027H01L27/02
CPCH01L21/0274H01L27/0207G03F1/36G06F30/398G03F7/70433G03F7/70441G06F30/392
Inventor 何育如洪爱真谢弘璋吕奎亮张雅惠
Owner TAIWAN SEMICON MFG CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products