Method of Lithography Process with Inserting Scattering Bars

Abstract

The present disclosure provides a method of lithography process with inserting scattering bar, the method including receiving an IC design layout including a first main feature and inserting a first plurality of scattering bars in the IC design layout to form a first circular pattern of scattering bars around the first main feature. The first main feature is positioned at a center portion of the first circular pattern of scattering bars. The method improves the depth of focus and scattering bar printout windows and reduce focus shift.

Description

technical field [0001] The present invention relates to a lithography process, in particular to a lithography process using dispersive stripes. Background technique [0002] The semiconductor integrated circuit industry has experienced exponential growth. Technological advances in integrated circuit design and materials have resulted in the development of integrated circuits in various generations, and each of the above generations has reduced the size to produce smaller and more complex circuits than the previous generation. During the evolution of integrated circuits, functional density (ie, the number of devices connected per single wafer area) typically increases as the geometry (ie, the smallest component or line) that can be produced by the process shrinks. [0003] The size reduction process described above can often lead to benefits such as increased manufacturing efficiency and reduced associated costs. The aforementioned size reduction also increases the complexi...

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Problems solved by technology

The size reduction mentioned above also increases the complexity of integrated circuit processing and manufacturing

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