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Semiconductor device and manufacturing method thereof

A semiconductor and device technology, applied in the field of semiconductor devices and their manufacturing, can solve problems such as reducing the electrical properties of transistors

Active Publication Date: 2019-03-01
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Stacking faults caused by growing layers of high-carrier-mobility materials on silicon substrates also degrade the electrical properties of such transistors

Method used

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  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof

Examples

Experimental program
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Embodiment Construction

[0015] The following disclosure provides many different embodiments or examples for implementing different features of the presented subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are examples only and are not intended to limit the invention. For example, in the following description, forming a first component over or on a second component may include an embodiment in which the first component and the second component are formed in direct contact, and may also include an embodiment in which a first component may be formed between the first component and the second component. Additional components such that the first and second components may not be in direct contact. In addition, the present invention may repeat reference numerals and / or characters in various instances. This repetition is for the sake of simplicity and clarity and does not in itself indicate a relationship between the ...

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PUM

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Abstract

A method of manufacturing a semiconductor device may include: forming an opening in an insulating layer to expose a portion of a major surface of a substrate, the substrate comprising a first semiconductor material; forming a protrusion in the opening using a first epitaxial growth process, the protrusion comprising a first portion disposed in the opening and a second portion extending out of the opening, the protrusion comprising a second semiconductor material different from the first semiconductor material; and forming the second semiconductor material on sidewalls of the second portion of the protrusion using a second epitaxial growth process different from the first epitaxial growth process.

Description

technical field [0001] Embodiments of the present invention relate to integrated circuit devices, and more particularly, to semiconductor devices and methods of manufacturing the same. Background technique [0002] The semiconductor industry has experienced rapid growth due to continued improvements in the integration density of various electronic components (eg, transistors, diodes, resistors, capacitors, etc.). In most cases, this improvement in integration density comes from iterative reductions in minimum feature size, which allow more components to be integrated into a given area. However, smaller component sizes may result in more leakage current. As the demand for smaller electronic devices has recently increased, the demand for reducing leakage current of semiconductor devices has also increased. [0003] Fin Field Effect Transistors (FinFETs) have emerged as an effective alternative to further reduce leakage current in semiconductor devices. In a FinFET, an activ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02
CPCH01L21/02647H01L21/02532H01L21/02538H01L21/02546H01L21/02549H01L21/02603H01L21/0262H01L21/02639H01L21/30604H01L29/0673H01L29/0676H01L29/66795
Inventor 乔治斯·威廉提斯马丁·克里斯多夫·霍兰德
Owner TAIWAN SEMICON MFG CO LTD
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