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Circuit and system of using junction diode as program selector for one-time programmable devices

A technology of memory and programming unit, which is applied in the direction of circuits, electrical components, semiconductor devices, etc., and can solve problems such as inappropriate

Active Publication Date: 2016-11-16
ATTOPSEMI TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Fuse elements 81 and 85 in Figures 3 and 4 are relatively large structures, which makes them unsuitable for some applications

Method used

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  • Circuit and system of using junction diode as program selector for one-time programmable devices
  • Circuit and system of using junction diode as program selector for one-time programmable devices
  • Circuit and system of using junction diode as program selector for one-time programmable devices

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Embodiment Construction

[0057] Embodiments of the present invention relate to programmable resistive elements using P+ / N well junction diodes as program selectors. The diode can include P+ and N+ active regions in an N-well region. The P+ and N+ active regions in the N-well region can be easily manufactured by standard CMOS technology, and the programmable resistance element of the present invention can be manufactured effectively and reduce the cost. For standard SOI, FinFET or similar technologies, the isolated active region can be fabricated as a program selector diode or as a programmable resistor element. The programmable resistance element can also be included in an electronic system.

[0058]In one or more embodiments, the junction diode can be fabricated in a standard CMOS process and used as a One-Time Programmable (OTP) device. One-time programmable elements may include electrical fuses as programmable elements. Examples of electrical fuses include interconnect fuses, local interconnect ...

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PUM

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Abstract

Junction diodes fabricated in standard CMOS logic processes can be used as program selectors for One-Time Programmable (OTP) devices, such as electrical fuses. At least one portion of the electrical fuse can have at least one extended area to accelerate programming. The program selector can be a diode or MOS that can be turned on through the channel or the source / drain junction. The OTP device can have the at least one OTP element coupled to at least one diode in a memory cell. A method of programming electrical fuses reliably is also disclosed. Advantageously, by controlled programming where programming current is maintained below a critical current, programming is reliable. In another embodiment, a programmable resistive device cell can use at least one MOS device as selector which can be programmed or read by turning on a source junction diode of the MOS or a channel of the MOS.

Description

technical field [0001] The invention relates to a programmable memory element, in particular to a programmable resistance element used in a memory array. Background technique [0002] A programmable resistive element generally means that the resistive state of the element can be changed after programming. The resistance state can be determined by the resistance value. For example, the resistive element may be a One-Time Programmable (OTP) element (such as an electrical fuse), and the programming method may apply a high voltage to generate a high current through the OTP element. When a high current flows through the OTP element by turning on the program selector, the OTP element will be programmed by firing into a high or low resistance state (depending on whether it is a fuse or an antifuse). [0003] Electrical fuse is a common OTP, and this programmable resistance element can be connected by a segment, such as polysilicon, silicided polysilicon, silicide, metal, metal al...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C17/16G11C17/18
CPCG11C17/16G11C17/18G11C13/003G11C2213/72H10B63/20H10B63/30
Inventor 庄建祥
Owner ATTOPSEMI TECH CO LTD
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