Film transistor, preparation method thereof and logic circuit

Abstract

The invention discloses a film transistor comprising a substrate, wherein a first structure layer and a second structure layer are successively formed on the substrate, and an insulating dielectric layer is arranged between the first structure layer and the second structure layer; first-Nth gate electrodes, a source electrode and a drain electrode are arranged in the first structure layer at intervals, and the source electrode and the drain electrode are connected through a semiconductor active area; a floating grate electrode is arranged in the second structure layer, the projection of the floating grate electrode on the first structure layer at least covers the partial area of the semiconductor active area and the partial area of each of the first-Nth gate electrodes, and N is an integer larger than 1. The invention further discloses a preparation method of the film transistor and a logic circuit including the film transistor. According to the invention, multi-input and single-output of the basic logic unit circuit are realized by one film transistor, and the process difficulty of the logic circuit is lowered.

Description

Technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a thin film transistor used in a logic circuit and a preparation method thereof, and also to a logic circuit. Background technique [0002] With the development of thin film transistor technology, thin film transistor devices with high mobility and high stability are not only suitable for pixel circuits of flat panel displays, but also for integrating peripheral driving circuits on substrates. The driving circuit contains a number of basic logic unit circuits. These basic logic unit circuits are directly implemented by thin film transistors. A basic logic unit circuit includes multiple thin film transistors. For example, multiple input terminals of the logic unit circuit are connected to A thin film transistor. However, most of the current amorphous silicon or metal oxide thin film transistors are N-type thin film transistors. The circuit composed of N-type thin film tr...

AI Technical Summary

Problems solved by technology

However, most of the current amorphous silicon or metal oxide thin film transistors are N-type thin film transistors, and the circuit composed of N-type thin film transistors consumes more power than the complementary pair forming circuit; in addition, because the basic logic unit circuit consists of Composed of multiple transistors, if one of the transistors fails, it is likely to cause the entire circuit to fail

Therefore, multiple transistors form a logic unit circuit, which is more dependent on the process and increases the complexity of the process.

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