Manufacturing method for short wave UV LED chip having high reflection ohmic contact electrode
A technology of ohmic contact electrodes and LED chips, which is applied to circuits, electrical components, semiconductor devices, etc., can solve the problems of difficulty in light extraction, difficulty in improving crystal quality, and difficulty in doping and activation, achieving high reflectivity and improving light extraction efficiency. Effect
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[0029] In order to make the objectives, technical solutions and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention, but not to limit the present invention.
[0030] Such as figure 1 As shown, the present invention is realized in this way. The method for manufacturing a short-wave ultraviolet LED chip with highly reflective ohmic contact electrodes includes the following steps:
[0031] Step S101, growing Al with an ultraviolet quantum well structure on the substrate x Ga 1-x N semiconductor single crystal film, structure I is obtained;
[0032] Step S102, the semiconductor film is lithographically etched and etched to the P-type AlxGa1-xN layer, leaving a P-type GaN cylinder with a diameter of 0.3-5 microns and a thickness of less than 0.2 microns, P-GaN The column spacing is 0...
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