Thin film transistor, display substrate and liquid crystal display device

Abstract

The present application provides a thin film transistor, a display substrate and a liquid crystal display device, so as to increase the turn-on current of the thin film transistor and reduce the turn-off current of the thin film transistor. The thin film transistor provided by the present application includes: a gate electrode, a gate insulating layer, and an active layer arranged on the substrate in sequence, and also includes: a source electrode arranged on the active layer, and an electrode arranged on the The drain between the gate insulating layer and the active layer.

Description

technical field [0001] The present application relates to the field of liquid crystal display, in particular to a thin film transistor, a display substrate and a liquid crystal display device. Background technique [0002] Thin Film Transistor Liquid Crystal Display (TFT-LCD) has the characteristics of small size, low power consumption, no radiation, and relatively low manufacturing cost, and occupies a dominant position in the current flat panel display market. [0003] The bottom-gate thin film transistor of the prior art TFT-LCD usually includes a gate, a gate insulating layer, an active layer, a source and a drain which are sequentially located on the substrate, wherein the source and the drain are usually arranged on the same layer. When the gate is connected to a high level, the electrons in the active layer usually move downward, forming an electronic conductive layer on the surface close to the gate, and the electrons in the source pass through the conductive layer ...

AI Technical Summary

Problems solved by technology

[0004] However, the thin film transistors of the prior art have relatively low turn-on current I-on and relatively large turn-off current I-off, which is not conducive to the development of liquid crystal display panels in the direction of high resolution.

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