Filter of tunable terahertz metamaterial and preparation method thereof based on low-voltage-driven liquid crystal material
A liquid crystal material and filter technology, which is applied in the field of tunable terahertz metamaterial filter and its preparation, can solve the problems of complex structure and preparation process, fixed working wavelength, limited working bandwidth, etc., and achieves simple structure and narrow working bandwidth. , the effect of small width
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specific Embodiment approach 1
[0040] Specific implementation mode one: combine Figure 1~4 , Figure 6 and Figure 7 Describe this embodiment mode. This embodiment mode is a tunable terahertz metamaterial filter based on low-voltage driving liquid crystal material. The filter is multi-layer flat, including a glass substrate layer 1, a first metal structure layer 2, an insulating layer 3. Metal seed layer 4, second metal structure layer 5, liquid crystal material 6 and glass cover plate 7;
[0041] The first metal structure layer 2 is arranged on the upper surface of the glass substrate layer 1, and the first metal structure layer 2 is composed of cylindrical metal 2-1 arranged in a rectangular array and strip-shaped metal 2-1 connected to the cylindrical metal 2-1. 2 composition;
[0042] The insulating layer 3 is arranged in the area surrounded by the cylindrical metal 2-1 and the strip-shaped metal 2-2, and the upper surface of the strip-shaped metal 2-2; the upper surface of the insulating layer 3 is...
specific Embodiment approach 2
[0054] Specific implementation mode two: combination figure 2 Describe this embodiment mode. The difference between this embodiment mode and specific embodiment mode 1 is: the cylindrical metal 2-1 and the elongated metal 2-2 are Ni, Cr, Al, Ag, Au or Cu, and the cylindrical metal 2 -1 and the elongated metal 2-2 have a height of 0.2 to 1 μm. Other steps and parameters are the same as those in the first embodiment.
specific Embodiment approach 3
[0055] Specific implementation mode three: combination image 3 Describe this embodiment mode, the difference between this embodiment mode and the specific embodiment mode 1 or 2 is: the insulating layer 3 is made of silicon dioxide, silicon nitride, aluminum oxide, photoresist, polyimide, benzocyclobutene or polydimethylacrylamide. Other steps and parameters are the same as one of the specific embodiments 1 to 4.
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