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A seed crystal axis and method for growing silicon carbide in liquid phase

A liquid phase growth, silicon carbide technology, applied in chemical instruments and methods, single crystal growth, single crystal growth and other directions, to achieve the effect of ensuring crystal quality and growth rate

Active Publication Date: 2019-04-12
SICC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Aiming at the deficiencies of the prior art, the present invention proposes a seed crystal axis and method for liquid-phase growth of silicon carbide, the purpose of which is to solve the problems of polymorphism, inclusions and stress caused by the above-mentioned high-speed growth, so that the crystal can not only guarantee Growth rate while maintaining crystal quality

Method used

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  • A seed crystal axis and method for growing silicon carbide in liquid phase
  • A seed crystal axis and method for growing silicon carbide in liquid phase
  • A seed crystal axis and method for growing silicon carbide in liquid phase

Examples

Experimental program
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Effect test

Embodiment 1

[0018] A seed shaft for liquid-phase growth of silicon carbide, comprising a graphite shaft 1, a graphite shaft cap 2 is connected to the lower end of the graphite shaft 1, and the graphite shaft cap 2 has a hollow structure;

[0019] The graphite shaft cap 2 and the graphite shaft 1 are connected by threads.

[0020] Using the above-mentioned method of growing silicon carbide in the liquid phase of the seed shaft, an inert gas is introduced into the growth chamber during the growth of the silicon carbide.

[0021] The inert gas is helium.

[0022] A temperature measuring hole 3 is provided in the middle of the graphite shaft 1.

[0023] In order to further increase heat dissipation, the height of the graphite shaft cap 2 is 10 cm.

Embodiment 2

[0025] A seed shaft for liquid-phase growth of silicon carbide, comprising a graphite shaft 1, a graphite shaft cap 2 is connected to the lower end of the graphite shaft 1, and the graphite shaft cap 2 has a hollow structure;

[0026] The graphite shaft cap 2 and the graphite shaft 1 are connected by a buckle.

[0027] Using the above-mentioned method of growing silicon carbide in the liquid phase of the seed shaft, an inert gas is introduced into the growth chamber during the growth of the silicon carbide.

[0028] The inert gas is helium.

[0029] A temperature measuring hole 3 is provided in the middle of the graphite shaft 1.

[0030] To further increase heat dissipation, the height of the graphite shaft cap 2 is 5 cm.

Embodiment 3

[0032] A seed shaft for liquid-phase growth of silicon carbide, comprising a graphite shaft 1, a graphite shaft cap 2 is connected to the lower end of the graphite shaft 1, and the graphite shaft cap 2 has a hollow structure;

[0033] The graphite shaft cap 2 and the graphite shaft 1 are connected by threads.

[0034] A temperature measuring hole 3 is provided in the middle of the graphite shaft 1.

[0035] Using the above-mentioned method of growing silicon carbide in the liquid phase of the seed shaft, an inert gas is introduced into the growth chamber during the growth of the silicon carbide.

[0036] The inert gas is argon.

[0037] The height of the graphite shaft cap 2 is 1 cm.

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Abstract

The invention relates to a seed crystal shaft and a method for liquid phase growth of silicon carbide, and belongs to the technical field of silicon carbide growth. The seed crystal shaft provided by the invention comprises a graphite shaft; the lower end of the graphite shaft is connected with a graphite shaft cap; the graphite shaft cap is of a hollow structure. According to the seed crystal shaft and the method for the liquid phase growth of the silicon carbide, the problems of polytypes, inclusions and stress caused by high-speed growth of a conventional method are solved; the temperature gradient can be regulated and controlled conveniently, so that the growth speed of a crystal is ensured, and meanwhile, the quality of the crystal can also be ensured.

Description

Technical field [0001] The invention relates to a seed crystal axis and a method for growing silicon carbide in a liquid phase, and belongs to the technical field of silicon carbide growth. Background technique [0002] Silicon carbide (SiC) single crystal has the advantages of wide band gap, high thermal conductivity, high breakdown field strength, and high saturated electron drift rate. It is the successor to the first generation semiconductor material silicon (Si) and the second generation semiconductor material (GaAs) The third-generation semiconductor materials developed later. The band gap of SiC single crystal is 3 times that of silicon, the thermal conductivity is 3.3 times that of silicon, the breakdown field strength is 13 times that of silicon, and the saturated electron drift rate is 2.7 times that of silicon. Therefore, compared with silicon single crystal, the excellent performance of SiC single crystal can better meet the new requirements of modern electronic tech...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/36C30B15/32
CPCC30B15/32C30B29/36
Inventor 朱灿王晓宋建李斌
Owner SICC CO LTD
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