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Memory cell and content addressable memory having the same

A memory cell and memory technology, applied in the field of memory cells, can solve the problems of increasing write and search power consumption, increasing circuit usage area, reducing data writing and comparison speed, etc., to reduce memory cell area, reduce metal The effect of the number of traces and improving the speed of writing and comparison

Inactive Publication Date: 2016-10-05
邱沥毅
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, traditional resistive content-addressable memory cells must use dual voltage sources, so a charge pump circuit or other various voltage conversion circuits need to be installed in the circuit, but such a design will not only increase the overall use of the circuit area , which increases the power consumption required for writing and searching, and also reduces the speed of data writing and comparison. Therefore, how to reduce the use of related electronic components will be the problem and focus of this case.

Method used

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  • Memory cell and content addressable memory having the same
  • Memory cell and content addressable memory having the same
  • Memory cell and content addressable memory having the same

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Embodiment Construction

[0018] In order to further explain the technical means and effects that the present invention adopts to achieve the intended invention purpose, the following in conjunction with the accompanying drawings and preferred embodiments, the specific implementation, structure, features and methods of the vehicle data integration method proposed in the present invention will be described below. Efficacy, detailed as follows.

[0019] figure 1 is a content addressable memory according to an embodiment of the present invention. The content addressable memory includes two operation modes in the operation process, one is the write mode, and the other is the search mode, wherein the content addressable memory mainly includes a first current direction selector 1, a second current direction selector Selector 2, address decoder 3, memory array 5, comparator 6 and a timing controller 7, wherein memory array 5 is composed of a plurality of memory cells, refer to figure 2 Shown is a circuit d...

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Abstract

The invention discloses a memory cell and a content addresable memory body. A memory cell includes a set of storage switch units, a set of memory units, a set of comparison switch units and a discharge switch unit. The storage switch units are turned on by a turn-on signal transmitted by a word line. The memory units receive and store write data transmitted by a bit line or a source line when the storage switch units are on under a write mode. The comparison switch units are turned on by comparison data transmitted by comparison lines under a search mode. The discharge switch unit is turned on by a detection voltage under the search mode when the comparison data transmitted by the comparison lines is different from the write data stored in the memory units, so that the reference signal transmitted to the comparator is redirected to a reference voltage. A content addressable memory using the memory cell is also provided.

Description

technical field [0001] The invention relates to a memory cell applicable to a resistive content addressable memory, in particular to a memory cell capable of simplifying circuit structure and a content addressable memory with the memory cell. Background technique [0002] Nowadays, due to the rise of energy awareness, low power consumption and small area design have become the indispensable design focus of electronic products such as handheld, wearable, and wireless sensor networks. However, memory usually occupies a relatively large ratio of power consumption and area of ​​a system chip, so that the reduction of power consumption of electronic products is limited, and the size of the overall area is also difficult to be reduced better. [0003] In order to solve the above problems, the resistive content addressable memory unit is currently used as an improvement of the conventional memory, because the resistive content addressable memory unit can be applied to hand-held, we...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C13/00
CPCG11C15/046G11C13/0002G11C13/0007G11C15/04G11C2213/74G11C2213/79G11C13/0028G11C13/0069
Inventor 邱沥毅简才淦
Owner 邱沥毅
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