Perpendicular anisotropic magnetic element, preparation method and magnetic memory

Abstract

The invention provides a perpendicular anisotropic magnetic element, a preparation method and a magnetic memory. A semiconductor integrated circuit is connected by the magnetic element in a magnetic device to form a storage bit cell; the magnetic element has a structure of a perpendicular anisotropic magnetic pinned layer, a non-magnetic spacer layer and a perpendicular anisotropic magnetic free layer; the non-magnetic spacer layer is located between the perpendicular anisotropic magnetic pinned layer and the free layer; the perpendicular anisotropic magnetic free layer has demagnetizing energy perpendicular to the membrane plane direction and corresponding perpendicular anisotropic energy; the perpendicular anisotropic energy is greater than the demagnetizing energy perpendicular to the membrane plane direction; and when write current passes through the magnetic element, the perpendicular anisotropic magnetic free layer can achieve switching between a parallel magnetic state and an anti-parallel magnetic state perpendicular to the plane direction through a spin torque transmission effect, so that the target of magnetic storage is achieved.

Description

technical field [0001] The invention belongs to the technical field of magnetic storage, and more specifically relates to a perpendicular anisotropic magnetic element, a preparation method and a magnetic storage. Background technique [0002] The magnetic random access memory based on the spin torque transfer mechanism, that is, the spin torque transfer magnetic random access memory (STT-MRAM), can replace the traditional magnetic random access memory based on the traditional magnetic field switch technology in terms of magnetic recording characteristics. Memory access memory (MRAM) technology is thus revolutionary. And promote the high density of magnetic recording, the scalability and sustainability of magnetic memory technology. Under the background of the continuous reduction of semiconductor technology nodes and the rapid increase of data recording density, the new spin torque transfer magnetic random access memory (STT-MRAM) scheme has broad application prospects in t...

AI Technical Summary

Problems solved by technology

[0003] The technical problem in the prior art is that the write current required by traditional magnetic random access memory (MRAM) increases exponentially with the increase in recording density.

Therefore, MRAM memory based on traditional magnetic field switch technology has difficult to expand and unsustainable problems

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