Low on-resistance blocking type surge protection device

A technology of surge protection devices and low on-resistance, applied in electrical components, emergency protection circuit devices, emergency protection circuit devices for limiting overcurrent/overvoltage, etc., can solve the problem of limiting system bandwidth, high unit cost, High failure rate and other issues, to achieve the effect of improving performance, low unit cost, and realizing overvoltage and overcurrent protection

Inactive Publication Date: 2016-09-07
上海芯琦电子科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] (2) Will limit system bandwidth (capacitive loads limit them to low-bandwidth applications);
[0006] (3) A complex design consisting of multiple components is required, resulting in a high failure rate;
[0007] (4) Larger space is often required;
[0008] (5) For the protection design scheme, the unit cost is high
However, in some applications, low on-resistance is required under the condition of small trigger current, at this time, conventional blocking surge protection devices cannot meet the requirements

Method used

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  • Low on-resistance blocking type surge protection device
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  • Low on-resistance blocking type surge protection device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0072] see figure 1 As shown in the schematic diagram of the circuit structure of Embodiment 1 of the present invention, a bidirectional blocking type surge protection device, the surge protection device 10 is composed of a first depletion type field effect transistor Q1 (depletion type N channel metal oxide semiconductor field effect transistor NMOSFET), second depletion mode field effect transistor Q2 (depletion mode N channel metal oxide semiconductor field effect transistor NMOSFET), third depletion mode field effect transistor Q3 (depletion mode P Channel junction field effect transistor PJFET), the first variable resistance element 101, the second variable resistance element 102, the first resistance R1 (constant current source resistance) and the second resistance R2 (constant current source resistance) form a series structure The conduction path forms a circuit module.

[0073] Wherein, the connection relationship of each device inside the surge protection device 10 (...

Embodiment 2

[0088]see figure 2 As shown in the schematic diagram of the circuit structure of Embodiment 2 of the present invention, it is an improvement to the surge protection device of Embodiment 1. In the surge protection device 20, the first variable resistance element 201 and the second variable resistance element 202 It is an N-channel depletion field effect crystal with gate and drain shorted.

[0089] The surge protection device 20 also includes a first feedback voltage divider R and a second feedback voltage divider R', wherein,

[0090] The first feedback voltage divider R is composed of a fourth resistor R4 and a fifth resistor R5 in series, and the middle node of the first feedback voltage divider R is between the fourth resistor R4 and the fifth resistor R5; the second feedback voltage divider R ' is composed of the sixth resistor R6 and the seventh resistor R7, and the middle node of the second feedback voltage divider R' is between the sixth resistor R6 and the seventh re...

Embodiment 3

[0096] see image 3 As shown in the schematic diagram of the circuit structure of Embodiment 3 of the present invention, it is another improvement method for the surge protection device of Embodiment 2. In the surge protection device 30, the first variable resistance element 301 and the second variable resistance The element 302 is a P-channel depletion field-effect crystal whose gate and drain are short-circuited.

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PUM

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Abstract

The invention discloses a low on-resistance blocking type surge protection device. A drain of a first transistor is connected with a module input end, and a grid of the first transistor is connected with a source of a second transistor; a drain of the second transistor is connected with a module output end, and a grid of the second transistor is connected with a source of the first transistor; a first variable resistor element is connected with a source of a first dependent mode field effect transistor and a source of a third transistor; a second variable resistor element is connected with the source of the second transistor and a drain of a third dependent mode field effect transistor; a grid of a third transistor is connected with a first resistor and a second resistor respectively; and the other end of the first resistor is connected with the module input end, and the other end of the second resistor is connected with the module output end. The low on-resistance blocking type surge protection device provided by the invention forms a variable resistance circuit similar to a resettable fuse, which can block and reset repeatedly for unlimited times; besides, the low on-resistance blocking type surge protection device can also realize blocking protection under low on-resistance and low trigger current, and improve the performance of the blocking type surge protection device.

Description

technical field [0001] The invention relates to the field of semiconductor devices, in particular to the field of semiconductor surge protection devices, and is a low on-resistance blocking surge protection device. Background technique [0002] Power surge or transient overvoltage is defined as a voltage that significantly exceeds the design value in an electronic circuit. It mainly includes lightning strikes, power line laps, power line induction, or ground bounce. When the surge is high enough, transient overvoltages can cause serious damage to electronic equipment such as computers and phones. It also results in reduced equipment life. [0003] Transient voltage surge suppressors limit the energy of electrical surges that couple to equipment, thereby protecting electronic equipment from damage. Products in this category include surge protection thyristors, oxide varistors and avalanche diodes. Both types of devices are connected in parallel in the protected circuit, an...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02H9/04
CPCH02H9/045
Inventor 叶力
Owner 上海芯琦电子科技有限公司
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