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Method for drawing single crystals and thermal field

A thermal field, single crystal technology, applied in the direction of single crystal growth, chemical instruments and methods, self-melting liquid pulling method, etc., can solve the problems of difficult control, unfavorable single crystal growth, etc. No softening point in strength and little effect of positional change

Inactive Publication Date: 2016-08-24
罗万前
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] With the reduction of molten silicon, the crucible moves upward in the heating body, and the thermal field in the crucible will change greatly, and it is difficult to control
This is also extremely detrimental to the growth of single crystals.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0065] specific implementation

[0066] One, the crystal pulling method of the present invention:

[0067] 1) Draw square or garden-shaped single crystal rods in a square crucible; it is also possible to draw a garden-shaped single crystal rod in a garden-shaped crucible;

[0068] 2) When pulling a square single crystal rod, the crucible neither rotates nor moves up and down;

[0069] 3) When seeding, the seed crystal moving up and down can be rotated or not;

[0070] 4) After the diameter of the crystal rod is close to the side length of the crucible, the crystal rod will no longer rotate;

[0071] 5) After the crystal rod is pulled out of the crucible, it is in a state of heat insulation within a certain height; the crystal rod above it is in a state of radiation cooling;

[0072] 6) The upward traction force of the ingot first acts on the crystal seed, then acts on the top, and finally directly acts on the square crystal ingot;

[0073] 7) Use the space between the double...

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PUM

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Abstract

The invention relates to a method for drawing single crystals and a thermal field. The thermal field which is nearly free of convection is created as much as possible; a square shallow flat-bottomed crucible is used as a container of a melt; the side length of the crucible is only multiple millimeters larger than the diameter of a crystal rod; tabulate heating sheets are tightly attached to the lower surface of the bottom of the crucible and the outer side of the side wall of the crucible; the heating sheets, the crucible and a thermal insulating layer are tightly attached together. Continuous feeding is conducted on the fixed crucible, rotating is stopped after the crystal rods have the same diameter, and the square single crystal silicon rods are drawn out directly and continuously. The method can be used for growing single crystal silicon or sapphire.

Description

technical field [0001] The invention relates to a single crystal pulling method and a thermal field. Background technique [0002] During crystal pulling, the silicon raw material is melted from polysilicon in the crucible, and the molten silicon is recrystallized into a single crystal rod under the conditions of crystal rotation and crucible rotation. [0003] The existing barrel-shaped quartz crucible cannot be continuously fed, and the silicon material required for one crystal rod needs to be added to the crucible at one time, so the diameter and height of the crucible are very large: the diameter is about 3 times that of the silicon rod. , about 2 times the height. [0004] This large-volume crucible also has a large surface area, and there are many loopholes that are inconvenient for heat insulation. The corresponding heat dissipation is extremely large. [0005] Extreme heat dissipation is only one of the results of poor thermal field distribution; [0006] The tem...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/00C30B29/06
Inventor 张洪齐
Owner 罗万前
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